GaAs ManTech On-Line Digest Search

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2013 On-line Digest Table of Contents

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SESSION 1: PLENARY I – GaAs INDUSTRY OVERVIEW
Chair: Scott Sheppard, Cree, Inc.

1.1

Invited Presentation
Challenges of Short Lifecycle Commercial Products in Compound Semiconductor Manufacturing
Howard S. Witham, TriQuint Semiconductor

 

Abstract

1.2

Invited Presentation
GaAs Foundry: Challenges and Future
David Danzilio, WIN Semiconductors Corp.

 

Abstract

1.3

Invited Presentation
A Co-operative Business Model for Advancing Compound Semiconductor Technology
Jerry Curtis, Global Communication Semiconductors

 

Abstract

1.4

Invited Presentation
GaAs Industry Overview and Forecast: 2011 – 2016 Abstract

Eric Higham, Strategy Analytics, Inc.

 

Abstract

SESSION 2:  Plenary II –PHOTONICS IC VOLUME MANUFACTURING
Chair: David Wang, Global Communication Semiconductors

2.1

Manufacturing Progress for InP-based 500 Gbps Photonic Integrated Circuits
Richard P. Schneider, Jr., Jacco L. Pleumeekers, Damien J. H. Lambert, Peter W. Evans, Andrew G. Dentai, Paul Liu, Jon Rossi, Scott Craig, Margherita Lai, Vikrant Lal, Naksup Kim, Eva Strzelecka, Pavel Studenkov, Adam James, Scott Corzine, Kuan-Pei Yap, Peter Debackere, Shashank Agashe, Jeffrey Glick, Christopher Hill, Quisheng Chen, Wayne Williams, Sanjeev Murthy, Ranjani Muthiah, Mark Missey, Scott DeMars, Mehrdad Ziari, Masaki Kato, Radhakrishnan Nagarajan, Arnold Chen, Sheila Hurtt, Fred Kish, Infinera Corporation

 

Abstract

2.2

 

Abstract

2.3

Invited Presentation
Heterogeneous Integration as a Manufacturing Platform for Photonic Integrated Circuits

Eric Hall, Jae Shin, Gregory Fish, Aurrion, Inc.

 

Abstract

SESSION 3:  OPTOELECTRONICS TECHNOLOGIES
Chair: Yohei Otoki, Hitachi Cable, Ltd.

3.1.

Invited Presentation
The Latest Progress of Nitride-based Visible LEDs and Laser diodes 
Shuji Nakamura, University of California, Santa Barbara

 

Abstract

3.2

Invited Presentation
The Discovery of III-V Oxidation, Device Progress, and Application to Vertical-Cavity Surface-Emitting Lasers
J. M. Dallesasse, University of Illinois at Urbana-Champaign

 

Abstract

3.3 

Invited Presentation
Non-850nm Vertical Cavity Laser Applications and Manufacturing Technology  
         
Klein Johnson, Vixar, Inc.

 

Abstract

3.4

Invited Presentation

AlInGaN Based Deep Ultraviolet Light Emitting Diodes and Their Applications Technology     
Asif Khan, University of South Carolina

 

Abstract

SESSION 4a:  PROCESS – BACKSIDE
Chair: Michelle Bourke, Oxford Instruments Plasma Technology

4a.1

Advances in Back-side Via Etching of SiC for GaN Device Applications
Anthony Barker1, Kevin Riddell1, Huma Ashraf1 & Dave Thomas1, Chia-Hao Chen2, Yi-Feng Wei2, I-Te Cho2 & Walter Wohlmuth2, 1SPTS Technologies, 2WIN Semiconductors Corp.

 

Abstract

4a.2

Meeting the Fabrication Challenges For Backside Processing on Thin Substrates with Ultrahigh Device Topography
Pavan Bhatia1, Roberta Hawkins1, Jan Campbell1, Martin Ivie1, Alex Smith2, Mark Privett2, Gary Brand2, 1TriQuint Semiconductor,2Brewer Science, Inc.

 

Abstract

4a.3

Wafer-level Backside Process Technology for Forming High-density VIAs and Backside Metal Patterning for 50-µm-thick InP Substrate
Takuya Tsutsumi, Toshihiko Kosugi, and Hideaki Matsuzaki, NTT Photonics Laboratories, NTT Corporation

 

Abstract

4a.4

 

Abstract

SESSION 4b:  PROCESS – LITHOGRAPHY
Chairs: Robert Mohondro, Plasma-Therm, LLC
Kamal Alavi, Raytheon

 

 

4b.1

Thick Film Photo Resist Application Spun on Application v. Dry Film Lamination

Suzanne Combe, TriQuint Semiconductor

 

Abstract

4b.2

The Effect of Exposure Mode on Feature Resolution and Film Thickness for Thick (>10 µm) BCB
J. Parke, A. Gupta, J. Mason, K. Renaldo, Northrop Grumman Electronic Systems

 

Abstract

4b.3

Final Module Yield Improvement by Increasing the Adhesion of SU8 to Microelectronic Devices using a DMAIC approach
Jan Campbell, Martin Ivie, Qizhi He, TriQuint Semiconductor

 

Abstract

4b.4

Automated Skiplot Sampling for Photoresist Thickness Measurement
David Punsalan, Donald Pursley, Christopher Roper, TriQuint Semiconductor

 

Abstract

SESSION 5a:  RF GaN PRODUCIBILITY
Chair: David Meyer, US Naval Research Laboratory
Glen “David” Via, Air Force Research Laboratory

5a.1

Invited Presentation
Recent Defense Production Act Title III Investments In Compound Semiconductor Manufacturing Readiness

Gene Himes1, David Maunder2, Bruce Kopp2, 1Air Force Research Laboratory, 2David P. Maunder Consulting

 

Abstract

5a.2

Title III Gallium Nitride (GaN) on Silicon Carbide (SiC) X-band MMIC Production
Joseph Smolko, Colin Whelan, Christopher Macdonald, Joshua Krause, Bradley Mikesell, Michael Benedek, Raytheon Corp.

 

Abstract

5a.3

 

Abstract

5a.4

GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Ryan Fury, Scott Sheppard, Jeffrey B. Barner, Bill Pribble, Jeremy Fisher, Donald A. Gajewski, Fabian Radulescu, Helmut Hagleitner, Dan Namishia, Zoltan Ring, Jennifer Gao, Sangmin Lee, Jim Milligan and John Palmour, Cree, Inc.

 

Abstract

5a.5

GaN-based Components for Transmit/Receive Modules in Active Electronically Scanned Arrays
Mike Harris, Robert Howard and Tracy Wallace, Georgia Tech Research Institute

 

Abstract

SESSION 5b:  EPITAXY & MATERIALS
Chairs: Guoliang Zhou, Skyworks Solutions, Inc.
Paul Pinsukanjana, IntelliEPI

5b.1

 

Abstract

5b.2

Impact of crystal-quality improvement of epitaxial wafers on RF and power switching devices by utilizing VAS-method grown GaN substrates with low-density and uniformly distributed dislocations
Yohei Otoki1, Takeshi Tanaka1, Hiroyuki Kamogawa1, Naoki Kaneda1, Tomoyoshi Mishima1,Unhi Honda2,and Yutaka Tokuda2,1Hitachi Cable, Ltd, 2Aichi Institute of Technology

 

Abstract

5b.3

Student Presentation

Fe-doped AlGaN/GaN HEMTs: Kink-Effect Screening using Yellow Luminescence?
Nicole Killat1, Michael J. Uren1, David J. Wallis2, Trevor Martin3, and Martin Kuball1, 1University of Bristol, 2University of Cambridge, 3IQE PLC

 

Abstract

5b.4

Performance and Reliability of AlGaN/GaN HEMT o_blankn 100-mm SiC Substrate with Improved Epitaxial Growth Uniformity
Sangmin Lee, Tim Kennedy, Christer Hallin, Helder Antunes, Brian Fetzer, Scott T. Sheppard, Al Burk, Don A. Gajewski, Rick McFarland, Jim Milligan and John Palmour, Cree, Inc.

 

Abstract

5b.5

Development of an Epitaxial Growth Process on European SiC Substrates for a Low Leakage GaN HEMT Technology with Power Added Efficiencies Around 65%
P. Waltereit1, S. Müller1, L. Kirste1, S. Storm2, A. Weber2, J. Splettstößer3, B. Schauwecker3, 1Fraunhofer Institute for Applied Solid State Physics, 2SiCrystal AG, 3United Monolithic Semiconductors GmbH

 

Abstract

SESSION 6a:  GaN PROCESS, DEVICE, & CIRCUITS
Chairs: Karen Moore, Freescale Semiconductor, Inc.
            Ming-yi Kao, TriQuint Semiconductor

6a.1

An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Simon M. Wood, Scott T. Sheppard, Fabian Radulescu, Don A. Gajewski, Bill Pribble, Donald Farrell, Ulf Andre Jeffrey B. Barner, Jim Milligan and John Palmour, Cree, Inc.

 

Abstract

6a.2

Student Presentation
Effect of sputtered SiN passivation on current collapse of AlGaN/GaN HEMTs
Md. Tanvir Hasan, Toshikazu Kojima, Hirokuni Tokuda, and Masaaki Kuzuhara, University of Fukui

 

Abstract

6a.3

Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
A.D. Koehler1, N. Nepal1, T.J. Anderson1, M.J. Tadjer2, K.D. Hobart1, C.R. Eddy, Jr.1, F.J. Kub1, 1Naval Research Laboratory, 2Universidad Politécnica de Madrid

 

Abstract

6a.4

Student Presentation
Fabrication Technology of GaN/AlGaN HEMT Slanted Sidewall Gates Using Thermally Reflowed ZEP Resist and CHF3/SF6 Plasma Etching
K. Y. Osipov, W. John, N. Kemf, S. A. Chevtchenko, P. Kurpas, M. Matalla, O. Krüger, and J. Würfl, Ferdinand-Braun-Institut

 

Abstract

6a.5

Development and Control of a 0.25μm Gate Process Module for AlGaN/GaN HEMT Production
Wei-Chou Wang, Chia-Hao Chen, Jhih-Han Du, Ming Hung Weng, Che-Kai Lin, Willie Huang, Ricky Chang, Shih-Hui Huang, Yi-Feng Wei, Stanley Hsieh, Michael Casbon, Paul J. Tasker, Wen-Kai Wang, I-Te Cho, Walter Wohlmuth, WIN Semiconductor Corp.

 

Abstract

SESSION 6b:  MANUFACTURING: TEST & CHARACTERIZATION
Chairs: Peter Ersland, M/A-COM Technology Solutions
           Hidetoshi Kawasaki, Sony

6b.1

Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes
Cristian Cismaru and Peter J. Zampardi, Skyworks Solutions, Inc.

 

Abstract

6b.2

Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process
Hsiu-Chen Chang, Shu-Hsiao Tsai, Cheng-Kuo Lin, Tim Hsiao, Steven Chou, Chen, Pi-Hsia Wang, and Dennis WilliamsJu-Yung, WIN Semiconductors Corp.

 

Abstract

6b.3

Improved Vertical Probe Technology for Production Probing on Cu Pillar Bumps
Martin J. Brophy, Chin-Shun Chen, Keith Quick, Avago Technologies

 

Abstract

6b.4

Real-time Validation of Probe Contact Quality in GaAs PCM Testing
Martin J. Brophy, Phil Marsh, Anthony Martinkus, and Judy Huggenberger, Avago Technologies

 

Abstract

6b.5

Real Time Dynamic Application of Part Average Testing (PAT) at Final Test
Douglas Pihlaja, TriQuint Semiconductor

 

Abstract

SESSION 7a:  THERMAL DESIGN I
Chair: John Blevins, Air Force Research Laboratory

7a.1

Invited Presentation
DARPA’s Intra/Interchip Embedded Cooling (ICECool) Program
Avram Bar-Cohen¹, Joseph J. Maurer², Jonathan G. Felbinger², 1Defense Advance Research Projects Agency, 2Booz Allen Hamilton

 

Abstract

7a.2

GaN HEMT Near Junction Heat Removal
Rajinder Sandhu1, Vincent Gambin1, Benjamin Poust1, Ioulia Smorchkova1, Gregg Lewis1, Raffi Elmadjian1, Danny Li1, Craig Geiger1, Ben Heying1, Mike Wojtowicz1, Aaron Oki1, Tatyana Feygelson2, Karl Hobart3, Bradford Pate3, Joe Tabeling4, Elah Bozorg-Grayeli5, Kenneth Goodson5, 1Northrop Grumman Aerospace Systems, 2SAIC, 3Naval Research Laboratory, 4Applied Diamond, Inc., 5Stanford University

 

Abstract

7a.3

 

Abstract

7a.4

Improved Near Junction Thermal Transport Using GaN on Diamond (extended abstract not available)
M.Tyhach1, D. Altman1, S. Bernstein1, R. Korenstein1, F. Ejeckam2, D. Francis2, K. Goodson3, S. Graham4, 1Raytheon Co., 2Group4Labs, 3Stanford University, 4Georgia Tech University

 

Abstract

SESSION 7b:  TRAPS & TRANSIENTS
Chairs: Tom Low, Agilent Technologies
Chang-Hwang Hua, WIN Semiconductors Corp.

7b.1

Invited Presentation
Correct Determination of Trap Densities at High-k/III-V Interfaces
R. Engel-Herbert, Pennsylvania State University

 

Abstract

7b.2

Temporal Characterization of Defects and Evolution of Strain in AlGaN/GaN HEMTs Under Bias  
H. Ghassemi1, A. Lang1, C. Johnson2, R. Wang3, B. Song3, H. Xing3, and M. L. Taheri1, 1Dept. of Materials Science and Engineering, Drexel University, 2Centralized Research Facilities, Drexel University, 3University of Notre Dame

 

Abstract

7b.3

Student Presentation

Interfacial Charge Properties of ALD/III-Nitride Interfaces
Ting-Hsiang Hung, Michele Esposto, Digbijoy Neelim Nath, Sriram Krishnamoorthy,Pil Sung Park and Siddharth Rajan, Dept. of Electrical and Computer Engineering, The Ohio State University

 

Abstract

7b.4

GaN Buffer Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AlGaN HEMTs
M. Silvestri1, M. J. Uren1, D. Marcon2, and M. Kuball1, 1University of Bristol, 2IMEC

 

Abstract

7b.5

Ultra Fast Switching Speed FET Technology Development
Jerod Mason, Guoliang Zhou, Joe Bulger, Jay Yang, David Petzold, Dylan Bartle, Skyworks Solutions, Inc.

 

Abstract

SESSION 8a:  THERMAL DESIGN II
Chairs: Andy Souzis, II-VI
Martin Kuball, University of Bristol

8a.1

Process Improvements for an Improved Diamond-capped GaN HEMT Device
T.J. Anderson1, A.D. Koehler1, M.J. Tadjer2, K.D. Hobart1, T.I. Feygelson3, B.B. Pate1, F.J. Kub1, 1Naval Research Laboratory, 2Universidad Politécnica de Madrid, Spain, 3SAIC, Inc.

 

Abstract

8a.2

Ag/Diamond Composite Shims for HPA Thermal Management
Jason H. Nadler, Keri A. Ledford, H. Michael Harris and Brent K. Wagner, Georgia Tech Research Institute

 

Abstract

8a.3

Thermal and Mechanical Sensors for Advancement of GaN RF MMIC Technologies
B. Wagner1, H.M. Harris1, M. King1, H. Chan1, N. Minor2 and L. B. Burns2, 1Georgia Tech Research Institute, 2PEO Integrated Warfare Systems, Naval Sea Systems Command

 

Abstract

8a.4

GaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling
Nicola Delmonte, Paolo Cova, and Roberto Menozzi, University of Parma

 

Abstract

8a.5

InGaP/GaAs HBT Safe Operating Area and Thermal Size Effect
Nick GM Tao, Chien-Ping Lee, Tony St. Denis and Tim Henderson, TriQuint Semiconductor, Inc.

 

Abstract

SESSION 8b:  PROCESS – METAL
Chairs: Suzanne Combe, TriQuint Semiconductor
            Jansen Uyeda, Northrop Grumman AS

8b.1

High Precision Thin Metal Film Measurement by Optical Transmission
Kezia Cheng, and Bing Hui Li, Skyworks Solutions, Inc.

 

Abstract

8b.2

SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature
D. J. Meyer1, D. A. Deen2, B. P. Downey1, D. S. Katzer1, D. F. Storm1, and S. C. Binari1, 1Naval Research Laboratory, 2University of Minnesota

 

Abstract

8b.3

Palladium Diffusion Barrier Grown by Electoplating for Backside Cu Metallization of GaAs devices
Daisuke Tsunami, Koichiro Nishizawa, Toshihiko Shiga, Tomoki Oku and Masayoshi Takemi, Mitsubishi Electric Corporation

 

Abstract

8b.4

Optimization of Electroplating Processes for Copper Bumps
Elizabeth Tan Calora and Travis Abshere, TriQuint Semiconducto

 

Abstract

8b.5

Back Metal Optimization for PbSn Die Attach Assembly
Jose Suarez, Jason Fender, and Jenn-Hwa Huang, Freescale Semiconductor

 

Abstract

SESSION 9a:  WIDE BANDGAP POWER DEVICES
Chairs: Toshihide Kikkawa, Fujitsu Laboratories
            Shyh-Chiang Shen, Georgia Tech

9a.1

Invited Presentation
High Temperature (> 200 °C), High Frequency (> 1 MHz) Multi-Chip Power Modules               
Ty McNutt, Brandon Passmore, Zach Cole, Bret Whitaker, Adam Barkley, Alex Lostetter, Arkansas Power Electronics International, Inc.

 

Abstract

9a.2

Emerging Applications for GaN Transistors
David Reusch, Alex Lidow, Johan Strydom, Michael de Rooij, Efficient Power Conversion Corporation

 

Abstract

9a.3

Student Presentation

600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
Zhikai Tang, Sen Huang, Qimeng Jiang, Shenghou Liu, Cheng Liu and Kevin J. Chen, The Hong Kong University of Science and Technology

 

Abstract

9a.4

600V-900V GaN-on-Si Process Technology for Schottky Barrier Diodes and Power Switches Fabricated in a Standard Si-Production Fab
J.J.T.M. Donkers1, S.B.S. Heil2, G.A.M. Hurkx1, H. Broekman3, R. Delhougne1, J.A. Croon2, D. Gravesteijn1, J. Šonský1, 1NXP Semiconductors Research, Belgium, 2NXP Semiconductors Research, High Tech Campus, The Netherlands, 3NXP Semiconductors Nijmegen, The Netherlands

 

Abstract

9a.5

182W L-band GaN High Power Module with 66% Power Added Efficiency Based on European Technologies
Stéphane Rochette1, Olivier Vendier1, Dominique Langrez1, Jean-Louis Cazaux1, Michael Buchta2, Martin Kuball3, Alain Xiong4, 1Thales Alenia Space, 2UMS GmbH, 3University of Bristol, 4AMCAD Engineering

 

Abstract

SESSION 9b:  LED OUTLOOK & TECHNOLOGY
Chairs: Ruediger Schreiner, Aixtron SE
Gene Kohara

9b.1

Invited Presentation
Low-Cost High-Efficiency GaN LEDs on Large-Area Silicon Substrates
Sir Colin J. Humphreys, University of Cambridge

 

Abstract

9b.2

Invited Presentation
How GaN-on-Si Could Disrupt the Current Equilibrium of the Booming LED Industry
Philippe Roussel, Yole Développement

 

Abstract

9b.3

Improvement of LED Luminance Efficiency by Sapphire Nano PSS Etching
H. Ogiya, T. Nishimiya, M. Hiramoto, S. Motoyama, O. Tsuji, and P. Wood, Samco, Inc.

 

Abstract

9b.4

Student Presentation

Improvement in enhanced spontaneous emission of Resonant Cavity Light Emitting Transistors via Inductively Coupled Plasma Etching Top Distributed Bragg Reflector          
Mong-Kai Wu, Michael Liu, and Milton Feng, University of Illinois at Urbana-Champaign

 

Abstract

SESSION 10a:  MATERIALS: GaN EPI
Chairs: Judy Kronwasser, NOVASiC
Robert Sadler, Global Communications Semiconductors, LLC

10a.1

MOCVD Growth of AlGaN/GaN Heterostructures on 6 inch Silicon
Jie Su, Hongwei Li, Seungjae Lee, Balakrishnan Krishnan, Dong Lee, George Papasouliotis, and Ajit Paranjpe, Veeco MOCVD Operations

 

Abstract

10a.2

Uniformity Studies of AlGaN/GaN HEMTs on 8-in Diameter Si(111) Substrate
S. Arulkumaran1, G. I. Ng2, S. Vicknesh1, C.M. Manojkumar1, K.S. Ang1, H. Wang2, M.J. Anand2, K. Ranjan1, S. L. Selvaraj3, W. Z. Wang3, G.-Q. Lo3, S. Tripathy4, 1Temasek Laboratories, Nanyang Technological University, 2School of Electrical and Electronics Engineering, Nanyang Technological University, 3Institue of Microelectronics, A*star, 4Institute of Materials Research and Engineering, A*star

 

Abstract

10a.3

High Voltage GaN-on-Silicon HEMTs
T. Boles1, C. Varmazis1, D. Carlson1, L. Xia1, D. Jin1, T. Palacios2, G. W. Turner3, R. J. Molnar3, 1M/A COM Technology Solutions, 2Massachusetts Institute of Technology, 3Massachusetts Institute of Technology, Lincoln Laboratory 

 

Abstract

10a.4

High Voltage GaN-on-Silicon Schottky Diodes
T. Boles1, C. Varmazis1, D. Carlson1, L. Xia1, D. Jin1, T. Palacios2, G. W. Turner3, R. J. Molnar3, 1M/A COM Technology Solutions, 2Massachusetts Institute of Technology, 3Massachusetts Institute of Technology, Lincoln Laboratory

 

Abstract

10a.5

Student Presentation
Comparison of Schottky Diodes on Bulk GaN substrates & GaN-on-Sapphire
Pei Zhao, Amit Verma, Jai Verma, Huili Xing and Debdeep Jena, University of Notre Dame

 

Abstract

SESSION 10b:  PROCESS – INTEGRATION
Chair: Steve Mahon, Cascade Microtech, Inc.

10b.1

Layout Practices for Die Size Reduction on InGaP/GaAs HBT MMICs for Handset Power Amplifier Applications
Shu-Hsiao Tsai, Rong-Hao Syu, Yu-Ling Chen, Wen-Fu Yu, Cheng-Kuo Lin, and Dennis Williams, WIN Semiconductors Corp.

 

Abstract

10b.2

Evaluation of Material and Process Contributions to BiFET Variation Using Design of Experiments
Peter J. Zampardi,  Bin Li, Cristian Cismaru, Hal Banbrook, and Andre Metzger, Skyworks Solutions, Inc.

 

Abstract

10b.3

Bulk Acoustic Wave Technology Advances
G. Fattinger, R. Aigner, P. Stokes, A. Volatier, F. Dumont, TriQuint Semiconductor

 

Abstract

10b.4

Heterointegration Technologies for High Frequency Modules Based on Film Substrates
Karlheinz Bock, Erwin Yacoub-George, Henry Wolf, Christof Landesberger, Gerhard Klink, and Horst Gieser, University of Berlin

 

Abstract

10b.5

Passivation Stress versus Top Metal Profiles by 3D Finite Element Modeling
Xiaokang Huang, Liping Zhu, Bang Nguyen, Van Tran, Harold Isom, TriQuint Semiconductor

 

Abstract

SESSION 11a:  GaN GATE DIELECTRICS
Chair: Patrick Fay, University of Notre Dame

11a.1

Invited Presentation
Characterization and Control of Insulated Gate Interfaces on GaN-Based Heterostructures
Tamotsu Hashizume1,2 and Masamichi Akazawa1, 1Hokkaido University, 2JST-CREST

 

Abstract

11a.2

Student Presentation
A Study on Al2O3 Deposition by Atomic Layer Deposition for III-Nitride Metal-Insulator-Semiconductor Field Effect Transistors
Yi-Che Lee, Tsung-Ting Kao, and Shyh-Chiang Shen, Georgia Tech University

 

Abstract

11a.3

Thermal Oxidization of MIS Interface between Etched GaN and ALD-Al2O3
Tetsuya Fujiwara1, Minoru Akutsu1, Norikazu Ito1, Junichi Kashiwagi1, Kentaro Chikamatsu1, Ken Nakahara1, and Masaaki Kuzuhara2, 1ROHM Co., Ltd., 2University of Fukui

 

Abstract

11a.4

Student Presentation
High Performance Enhancement-Mode AlGaN/GaN MOSHEMT using Bimodal-Gate-Oxide and Fluoride-Based Plasma Treatment
Liang Pang and Kyekyoon Kim, University of Illinois at Urbana-Champaign

 

Abstract

11a.5

Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy
Jeffrey LaRoche, William Hoke, David Altman, James McClymonds, Paul Alcorn, Kurt Smith, Eduardo Chumbes, Jeff Letaw, and Thomas Kazior, Raytheon IDS Microelectronics

 

Abstract

SESSION 11b:  YIELD ENHANCEMENT AND MANUFACTURING
Chair: Marty Brophy, Avago Technolgies

11b.1

Invited Presentation

Challenges of Equipment Support in a Factory with a Diverse Multigenerational Toolset
David W. Brindza, Travis A. Abshere, TriQuint Semiconductor

 

Abstract

11b.2

Factory Automation for Overall Fab Efficiency
Nirav Thakkar, Skyworks Solutions

 

Abstract

11b.3

Optimizing Staff Levels Using Linear Programming
Marino Arturo and Ariel Meyuhas, MAX I.E.G.

 

Abstract

11b.4

Yield Learning of a GaAs-Based High-Throw-Count Switch for Handset Applications
Tertius Rivers, Corey Nevers, Chi-hing Choi, Hui Liu, TriQuint Semiconductor

 

Abstract

11b.5

Combining Visual Inspection and Bare Die Packaging for High Volume Manufacturing
Chang’e Weng and Thorsten Saeger, TriQuint Semiconductor

 

Abstract

SESSION 12:  POSTER SESSION
Chairs: Kelli Rivers, Materion
Corey Nevers, TriQuint Semiconductor
Jansen Uyeda, Northrop Grumman AS

12.1

How Mask Data Error Rate Maintained at below 0.1% While Volume Increased 2+ Folds – Through Automation
Susie Ross, Tin Ko, Jianli Fu, Hongxiao Shao, Skyworks Solutions, Inc.

 

Abstract

12.2

Student Presentation
Yield Improvement in Fabrication of Edge Emitting Transistor Lasers by optimized BCB planarization
Rohan Bambery and Milton Feng, University of Illinois at Urbana-Champaign

 

Abstract

12.3

Development of PVD-AlN Buffer Process for GaN-on-Si
Frank Cerio, Arindom Datta, Adrian Devasahayam, Boris Druz, Veeco Instruments

 

Abstract

12.4

Student Presentation
GaN MOSHEMT Using Sputtered-Gate-SiO2 and Post-Annealing Treatment
Liang Pang1, Yaguang Lian1, Dong-Seok Kim2, Jung-Hee Lee2, and Kyekyoon Kim1, 1University of Illinois at Urbana-Champaign, 2Kyungpook National University, Korea

 

Abstract

12.5

 

Abstract

12.6

Formation of slanted gates for GaN-based HEMTs by combined plasma and wet chemical etching of silicon nitride
A. Thies, N. Kemf, S.A. Chevtchenko, and O. Krüger, Ferdinand-Braun-Institut-Berlin

 

Abstract

12.7

Deposition control during GaN MOVPE
D. Fahle1, T. Krücken2, M. Dauelsberg2, R. Schreiner2, H. Kalisch1, M. Heuken1,2 and A. Vescan1, 1RWTH Aachen University, 2AIXTRON SE

 

Abstract

12.8

Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore Applications
T. Uhrmann, T. Matthias, T. Glinsner, V. Dragoi, T. Plach, E. Pabo, M. Wimplinger and P. Lindner, EV Group

 

Abstract

12.9

Student Presentation
Methods of Improving GaN-Based LED Luminous Efficiency
Liang-Yu Su and JianJang Huang, National Taiwan University

 

Abstract

12.10

Student Presentation
Current Gain Enhancement of Light-Emitting Transistors Under Different Ambient Temperatures
Wen-Chung Tu and Chao-Hsin Wu, National Taiwan University

 

Abstract

12.11

BCB Encapsulation for High Power AlGaN/GaN-HFET Technology
P. Kurpas, O. Bengtsson, S. A. Chevtchenko, I. Ostermay, R. Zhytnytska, W. Heinrich, J. Würfl, Ferdinand-Braun-Institut-Berlin

 

Abstract

12.12

Recent Developments in Real-Time Thickness Control of Plasma Deposited Thin Film Dielectrics Using Optical Emission Interferometry
Kenneth D. Mackenzie, David J. Johnson, Christopher W. Johnson, and Linnell Martinez, Plasma-Therm, LLC

 

Abstract

12.13

Reducing Defects Using a 5x Stepper in Pattering 80 µm SU8 on MEMS Devices
Jean-François Bédard, Jan Campbell, Martin Ivie, Elda Clarke and Gary Head, TriQuint Semiconductor

 

Abstract

12.14

Back to the Future: How Implementing Retro-Style Processing Can be an Improvement
Martin Ivie, Jan Campbell, Qizhi He, TriQuint Semiconductor

 

Abstract

12.15

Student Presentation
Growth and Characterization of Band Gap Engineered InGaAs/InAlAs/ GaAs High Electron-Mobility Quantum Well Structure Towards Low Leakage VLSI Applications
U. P. Gomes1, Y. Chen2, Y.K.Yadav1, S. Ghosh1, S. Chowdhury1, P. Mukhopadhyay1, P. Chow2 and D. Biswas1, 1Indian Institute of Technology Kharagpur, 2SVT Associates

 

Abstract

12.16

Developing a Fundamental Understanding of Gold Spitting During Evaporation
Alan Duckham1, Lawrence Luke2, Robert Sprague2, 1Materion Microelectronics & Services, 2Materion Barr Precision Optics & Thin Film Coatings

 

Abstract

12.17

Developing a Fundamental Understanding of Gold Spitting During Evaporation
Alan Duckham1, Lawrence Luke2, Robert Sprague2, 1Materion Microelectronics & Services, 2Materion Barr Precision Optics & Thin Film Coatings

 

Abstract

12.18

Integrating a Control Plan Methodology into an MES System to Enhance Ease of Process Control
Lesley Cheema, Jason Welter, Nicolas Awad, TriQuint Semiconductor

 

Abstract

 

 

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