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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2014 On-line Digest Table of Contents

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SESSION 1: PLENARY I Chairs: Paul Cooke, IQE Scott Sheppard, Cree, Inc.
1.1	Invited Presentation Wireless Communications 2020 Scott Townley, Verizon Corporate Technology	Abstract
1.2	Invited Presentation Trends in RF design and technologies for mobile wireless devices Jay Kruze, Amazon (Lab 126)
1.3	Invited Presentation Market Presentation of Wide-Bandgap SiC and GaN technology market propects in light of progress of Si Superjunction and IGBT technology Anup Bhalla, United Silicon Carbide, Inc.,	Abstract
SESSION 2: GaN Reliability & Characterization Chairs: Shawn Burnham, HRL Tom Low, Agilent
2.1	Invited Presentation GaN Reliability – Where We Are and Where We Need to Go G. D. Via, AFRL	Abstract
2.2	Invited Presentation Traps in MOCVD n-GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy Yutaka Tokuda, Aichi Institute of Technology	Abstract
2.3	Invited Presentation Finding (point) defects in (nitride-based) device structures using TEM imaging techniques Petra Specht, University of California in Berkeley
2.4	Invited Presentation Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios, Massachusetts Institute of Technology	Abstract
SESSION 3: MANUFACTURING Chairs:Gene Kohara, Marubeni NA Arnold Chen, Aurrion
3.1.	Wavetek’s GaAs Manufacturing in 6” CMOS Fab Weber Wei, Jeff Lin, MT Wu, Jackie Huang, Sam Chou, Amos Yen, CG Shih, Vance Su, MY Chen and Alex Chien, Wavetek Microelectronics Corporation, United Microelectronics Corporation	Abstract
3.2	Precision-guided Equipment Maintenance in a Modern Foundry – Case Study Dimitry Gurevich, Ariel Meyuhas, Marino F. Arturo, MAX I.E.G. LLC	Abstract
3.3	Implementing Simple Automation on Legacy Equipment without OEM Support Corey Anderson and Dana Schwartz, TriQuint Semiconductor	Abstract
3.4	A Case Study in Support of the Captive Fabrication Facility Gerhard S. Schoenthal, Thomas W. Crowe, Jeffrey L. Hesler, and Stephen H. Jones, Virginia Diodes, Inc.	Abstract
SESSION 4: YIELD Chairs: Corey Nevers, TriQuint Semiconductor Judy Kronwaser, NovaSiC
4.1	GaAs Wafer Breakage Reduction ShibanTiku, Bruce Darley, Manjeet Singh , Ernesto Ambrozio, Patrick Santos, Skyworks Solutions Inc.	Abstract
4.2	Cost Reduction Strategies for Equipment Repair and Maintenance Heather Knoedler and Bob Delotto, Skyworks Solutions, Inc.	Abstract
4.3	Yield Improvement of Voltage Regulator in Next-Generation Wifi Front-End Module Peng (Tom) Cheng, Patrick Carroll, Tom Rogers, Dain Miller, RF Micro Devices, Inc.	Abstract
4.4	*Yield Enhancement of 0.25 μm GaN HEMT Foundry Technology* Wei-Chou Wang, Jhih-Han Du, Che-Kai Lin, Ming-Hung Weng, Cheng-Wen Peng, Wen-Kai Wang, Walter Wohlmuth, WIN Semiconductors Corp.	Abstract
4.5	*Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring* Shawn D. Burnham, David F. Brown, Robert M. Grabar, Dayward R. Santos, Dana C. Wheeler, Samuel J. Kim, Thomas C. Oh, Steven T.W. Chen and Miroslav Micovic, HRL Laboratories	Abstract
SESSION 5: NOVEL AND EMERGING OPTOELECTRONIC DEVICES Chairs: Patrick Fay, University of Notre Dame Kevin Stevens, IQE
5.1	Student Presentation Design and Modeling of Mid-Infrared Transistor-Injected Quantum Cascade Lasers Kanuo Chen, John Dallesasse, University of Illinois at Urbana-Chamapign	Abstract
5.2	Student Presentation Optimization of Selective Oxidation for 850 nm (IR) and 780 nm (Visible) Energy/Data Efficient Oxide-Confined Microcavity VCSELs Kanuo Chen, John Dallesasse, University of Illinois at Urbana-Chamapign	Abstract
5.3	Student Presentation *Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer* Wenjun Li a, Andreas Beling b, Joe Campbell b, Glen Hillier c, Chris Stender c, Noren Pan c, and Patrick Fay, University of Notre Dame, University of Virginia, MicroLink Devices, Inc.	Abstract
5.4	Student Presentation *Characterization of InxGa1-xAs Tunnel Junction Light-Emitting Transistors* Cheng-Han Wu and Chao-Hsin Wu, National Taiwan University	Abstract
5.5	Student Presentation Spur-Free Dynamic Range Measurements of the Light-Emitting Transistor PL.Lam,1,2 J.M.Dallesasse,1 G.Walter2, University of Illinois at Urbana-Champaign	Abstract
SESSION 6: POWER DEVICES Chairs: Toshihide Kikkawa, Transphorm Japan Dave Wang, GCS
6.1	Student Presentation Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate Zhikai Tang, Sen Huang, and Kevin J. Chen*, Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science	Abstract
6.2	Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics T. Boles, D. Carlson, L. Xia, A. Kaleta, C. McLean, D. Jin, T. Palacios, G. W. Turner, R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory	Abstract
6.3	Recent Progress in GaN-on-Diamond Device Technology J.D. Blevins, G.D. Via, K. Chabak, A. Bar-Cohen, J. Maurer, A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton	Abstract
6.4	Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Marko J. Tadjer, Tatyana I. Feygelson, Jennifer K. Hite, Bradford B. Pate, Charles R. Eddy, Jr., Francis J. Kub, Naval Research Laboratory	Abstract
6.5	Student Presentation Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme Yi-Che Lee, Tsung-Ting Kao, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchphrom, Russell D. Dupuis and Shyh-Chiang Shen, Georgia Institute of Technology	Abstract
SESSION 7: PROCESS - METALLIZATION Chairs: Keith Wieber, RFMD Marty Brophy, Avago
7.1	The Effect of Ni Content on Lateral Diffusion of Alloyed Au-Ni-AuGe Ohmic Contacts in GaAs-AlGaAs pHEMT Structures Mike Powers, John Staroba and Japheth Cheng, Agilent Technologies	Abstract
7.2	Pad Adhesion Investigation and Layout Optimization Xiaokang Huang, David Gonzalez, Duofeng Yue, Jinhong Yang, Jeremy Middleton, Van Tran, Bang Nguyen, Harold Isom, TriQuint Semiconductor, Inc.	Abstract
7.3	A Mathematical Model to Determine the Impact of Through-Wafer-Vias on Backside Plating Thickness Jens Riege, Skyworks Solutions, Inc.	Abstract
7.4	Yield improvement of metal-insulator-metal capacitors in MMIC fabrication process based on AlGaN/GaN HFETs S. A. Chevtchenko, S. Freyer, L. Weixelbaum, P. Kurpas, and J. Würfl, Ferdinand-Braun-Institute	Abstract
7.5	Improved Availability for Copper Plater Tools Patrick Santos, Jens Riege, Skyworks Solutions, Inc.	Abstract
SESSION 8: NORMALLY OFF GaN POWER DEVICES Chairs: Naveem Tipirneni, Texas Instruments Ming-Yih Kao, TriQuint Semiconductor
8.1	A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift P. Waltereit, A. Leuther, J. Rüster, H. Czap, R. Iannucci, S. Müller, M. Mikulla and O. Ambacher, Fraunhofer Institute	Abstract
8.2	Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors Erofeev E.V., Arykov V.S., Kagadei V.A, Stepanenko M.S., Kazimirov A.I., Fedin I.V., Research and Production Company Micran	Abstract
8.3	Student Presentation High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2 Woojin Choi, Hojin Ryu, Ogyun Seok, Minseok Kim, Ho-Young Cha, and Kwang-Seok Seo, Seoul National University	Abstract
8.4	Student Presentation The Effects of Gate Metals on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors Finella Lee, Liang-Yu Su, and JianJang Huang,* National Taiwan University	Abstract
8.5	Student Presentation Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance T.-T. Kao, J. Kim, Y.-C. Lee, M.-H. Ji, T. Detchprohm, R. D. Dupuis, and S.-C. Shen,* Georgia Institute of Technology	Abstract
SESSION 9: PROCESS-THIN FILMS Chairs: Steve Mahon, Cascade Microtech Shiban Tiku, Skyworks Solutions
9.1	ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota, Kai Kwok, and Ravi Ramanathan, Skyworks Solutions, Inc.	Abstract
9.2	Thermal Property of WNiSi Thin Film Resistor Xiaokang Huang, Duofeng Yue, Arif Choudhury, Paul Horng, Elisabeth Marley, Jinhong Yang, Craig Hall, Harold Isom,* TriQuint Semiconductor, Inc.	Abstract
9.3	An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors Lam Luu-Henderson, Shiban Tiku, Hong Shen, Richard Bingle, Daniel Weaver, Gary Hu, Cristian Cismaru, Mike Sun, and Ravi Ramanathan Hong Shen, Skyworks Solutions, Inc., formerly of Skyworks Solutions, Inc.	Abstract
9.4	Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN Kevin Voon, Kyle Bothe, Pouyan Motamedi, Douglas Barlage, Ken Cadien, University of Alberta	Abstract
9.5	Moisture resistance of insulating films for compound semiconductor devices Tomoki Oku, Manabu Okumura, Masahiro Totsuka, Toshihiko Shiga and Masayoshi Takemi, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.	Abstract
SESSION 10: PROCESS - GaN (1) Chairs: Karen Moore, Freescale Dane Henry, RFMD
10.1	An Optical 150-nm Y-Gate Process for InAlN/GaN HEMTs Hiroyuki Ichikawa, Isao Makabe, Yasunori Tateno, Ken Nakata and Kazutaka Inoue, Sumitomo Electric Industries, Ltd.	Abstract
10.2	Implementation of slanted sidewall gates technology in the fabrication of S-, X-, and Ka-band AlGaN/GaN HEMTs. K. Y. Osipov, S. A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf and J. Würfl, Ferdinand-Braun-Institute	Abstract
10.3	Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability Richard Lossy , Hervé Blanck and Joachim Würfl, Ferdinand-Braun-Institute, United Monolithic Semiconductors	Abstract
10.4	Student Presentation Improved current collapse inAlGaN-GaN HEMTs by O2plasma treatment Yoshiki Sakaida, Hirokuni Tokuda and Masaaki Kuzuhara, University of Fukui,	Abstract
10.5	Student Presentation High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain Xing Lu, Jun Ma, Peiqiang Xu, Huaxing Jiang and Kei May Lau, Hong Kong University of Science and Technology	Abstract
SESSION 11: TRANSISTOR TECHNOLOGY Chairs: George Henry, Northrup Grumman (ES) Mike Sun, Skyworks Solutions
11.1	An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications Yuefei Yang, Dave Wang, Wing Yau, Bryan Lee, Dave Rasbot, Hau Tan, and Daniel Hou, Global Communication Semiconductors, LLC	Abstract
11.2	Student Presentation Surface Recombination and Performance Issues of Scaling Submicron Emitter on Type-II GaAsSb Huiming Xu, Eric Iverson, and Milton Feng, University of Illinois at Urbana-Champaign	Abstract
11.3	Improved GaAs HBT Device Linearity with Flattened Cutoff Frequency Curve Cristian Cismaru and Mike Sun, Skyworks Solutions, Inc.	Abstract
11.4	Improvement of Transconductance Flatness of GaAs MESFETs Debdas Pal, Alan Noll and Kimberly Conway, MACOM	Abstract
11.5	High Performance GaAs RF Switch with a P-Type Capping Layer K. Takeuchi, S. Taniguchi, M. Yanagita, Y. Sasaki, M. Nakamura, and S. Wada, Sony Corporation	Abstract
SESSION 12: PROCESS - GaN (2) Chairs: Hidetoshi Kawasaki, Sony Michelle Bourke, Oxford Instruments
12.1	The First 0.2um 6-Inch GaN-on-SiC MMIC Process R. Isaak , J. Diaz, M. Gerlach, J. Hulse, L. Schlesinger, P. Seekell, W. Zhu, W. Kopp, X. Yang, A. Stewart, K. Chu, P. C. Chao, X. Gao, M. Pan, D. Gorka, M. Olive1 and I. Eliashevich, MEC, BAE Systems, IQE	Abstract
12.2	Student Presentation Process Variations to Normally-off GaN HEMTs on Si with p-GaN Cap Layer Liang-Yu Su, Finella Lee, and JianJang Huang, National Taiwan University	Abstract
12.3	Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning Keiichi Matsushita, Hiroyuki Sakurai, Akio Miyao, Yukio Takahasi, Kazutaka Takagi, Toshiba Corp.	Abstract
12.4	Student Presentation 77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate Dong-Hwan Kim, Ji-Hoon Kim, Su-Keun Eom, Min-Seong Lee, and Kwang-Seok Seo, Seoul National University	Abstract
12.5	Student Presentation The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs Neung-Hee Lee, Woojin Choi, Minseong Lee, SeonhongChoi, and Kwang-Seok Seo, Seoul National University	Abstract
SESSION 13: EPITAXIAL GROWTH Chairs: Ruediger Schreiner, Aixtron SE Andy Souzis, II-VI, Inc.
13.1	Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures Jie Su, Balakrishnan Krishnan, Ajit Paranjpe and George D. Papasouliotis, Veeco	Abstract
13.2	SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature A. MaaBdorf, M. Zorn, O. Schulz, J.-T. Zettler, and M. Weyers, Ferdinand-Braun-Institute, Jenoptik Diod Lab, LayTec AG	Abstract
13.3	Translating Epi Structures into Growth Recipes — Manufacturability Concerns Guoliang Zhou and Mark Borek, Skyworks Solutions, Inc.	Abstract
13.4	GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling Yu Cao, Oleg Laboutin, Chien-Fong Lo, Kevin O’Connor, Daily Hill, and Wayne Johnson, IQE	Abstract
13.5	The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering N.Furukoshi ,K.Mutoh, Y.Fukunaga,T.Yamamura, T.Iwata, Furukawa DenshiI Co.,Ltd.	Abstract
SESSION 14: PROCESS - BACKEND Chairs: Russ Westerman, Plasma-Therm Heribert Zull, Osram
14.1	Quality and throughput improvement of GaN/SiC wafer saw with the addition of ultrasonic power Fraser Wang, Vincent Hsu, Stanley Hsieh, I-Te Cho, Walter Wohlmuth, WIN Semiconductors Corp.	Abstract
14.2	Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits Chia-Hao Chen, Yu-Wei Chang, Ming-Hung Weng, Ricky Chang, Shih-Hui Huang, Fraser Wang, Yi-Feng Wei, Stanley Hsieh, I-Te Cho, Walter Wohlmuth, WIN Semiconductors Corp	Abstract
14.3	Productivity Improvement Using Plasma-based Die Singulation D. Pays-Volard, L. Martinez, K. Mackenzie, T. Lazerand, and R. Westerman, D. Lishan, Plasma-Therm LLC,	Abstract
14.4	Diamond-coated High Density Vias for Silicon Substrate-side Thermal Management of GaN HEMTs Marko J. Tadjer, Karl D. Hobart, Tatyana I. Feygelson, Travis J. Anderson, Andrew D. Koehler, Ashu Wang, Fernando Calle, Bradford B. Pate, Fritz J. Kub, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid	Abstract
14.5	Improvements in Thin Wafer Handling - Equipment and Material Impacts Molly Hladik, Pavan Bhatia, Brewer Science, TriQuint Semiconductor	Abstract
SESSION 15: GaAs CHARACTERIZATION Chairs: Chris Youtsey, Microlink Devices Jansen Uyeda, Northrop Grumman (AS)
15.1	Student Presentation Process control in GaAs manufacturing using Chua’s circuit Evgeny Kuxa, Anthony E. Parker, Simon J. Mahony, Anna Dadelloy, Wen-Kai Wangz, Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors	Abstract
15.2	High Speed Highly Parallel Multi-site GaAs Diesort Testing Martin J. Brophy, Brian Bergeson, Royce Grover, and Keith Quick, Avago Technologies, Keithley Instruments, Inc.	Abstract
15.3	Developing Power Amplifier Module Standards for Reliability Qualification William J. Roesch, TriQuint Semiconductor, Inc.	Abstract
15.4	A Robust Design of MMIC using Taguchi Method A. Oya, A. Maekawa, H. Yamamoto, T. Yamamoto, T. Sato, S. Sano and N. Kurokawa, Sumitomo Electric Device Innovations, Inc.	Abstract
15.5	TransImpedance Amplifiers – what’s the buzz? Debbora Ahlgren, Cascade Microtech	Abstract
SESSION 16: MATERIALS FOR GaN TECHNOLOGY Chairs: Yohei Otoki, Hitachi Metals Russ Kremer, Freiberger CM
16.1	Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface M. Akazawa, M. Chiba, and T. Nakano, Hokkaido University	Abstract
16.2	Need for Defects in Floating-Buffer AlGaN/GaN HEMTs M.J. Uren, M. Silvestri, M. Cäsar, J.W. Pomeroy, G.A.M. Hurkx, J.A. Croon+, J. Šonský, and M. Kuball, University of Bristol, NXP Semiconductors Belgium and Netherlands	Abstract
16.3	Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes Timothy Boles, Ling Xia, Allen Hanson, Anthony Kaleta, and Chris McLean, MACOM Technology Solutions	Abstract
16.4	Growth of bulk GaN Crystal by Na Flux Method Y. Mori,M. Imade, M.Maruyama,M. Yoshimura, Osaka University	Abstract
SESSION 17: HETEROGENEOUS INTEGRATION Chairs: John Blevins, AFRL Dave Meyer, NRL
17.1	Advanced bonding techniques for photonic integrated circuits M.Eibelhuber, T. Matthias, T. Uhrmann, V. Dragoi and P. Lindner, EV Group	Abstract
17.2	Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates Jeffrey LaRoche, Kelly Ip, Mark Breen, Yu Cao, John P. Bettencourt, Doug Guenther, Gabe Gebara, Oleg Laboutin, Chien-Fong, Tina Trimble, Wayne Johnson and Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE	Abstract
17.3	Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors J. Pomeroya*, M. Bernardonia, D.C. Dumkab, D.M. Fanningb, M. Kuballa, University of Bristol, TriQuint Semiconductor	Abstract
17.4	Invited Presentation The DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program: Convergence of Compound Semiconductor Devices and Silicon-Enabled Architectures Daniel S. Green, Carl L. Dohrman, Tsu-Hsi Chang, DARPA, Booze Allen Hamilton, HetInTec Corp.	Abstract
SESSION 18: INTERACTIVE FORUM Chairs: Nick Kolarich, Epiworks Kelli Rivers, Vacuum Engineering and Material Suzanne Combe, TriQuint Semiconductor
18.1	Student Presentation Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients? Saptarsi Ghosh, Ankush Bag, Partha Mukhapadhay, Syed Mukulika Dinara, Sanjay .K. Jana, Sanjib Kabi, and Dhrubes Biswas,* Indian Institute of Technology	Abstract
18.2	Student Presentation Measurement of Base Transit Time and Minority Electron Mobility in GaAsSb-Base InP DHBTs University of Illinois at Urbana-Champaign, Agilent Technologies	Abstract
18.3	RF Magnetron Sputtering Process of P-Type NiO Thin Films Suitable for Mass Production of Compound Semiconductor Devices Valeriy V. Felmetsger, OEM Group Inc.	Abstract
18.4	High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design Rei-Bin Chiou, Ta-Chuan Kuo, Cheng-Kuo Lin, Shu-Hsiao Tsai, Shin-Yi Ho, Tung-Yao Chou, Dennis Williams, and Yu-Chi Wang, WIN Semiconductors Corp.	Abstract
18.5	Student Presentation AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment Liang Pang, Ogyun Seok, *Kyekyoon (Kevin) Kim, University of Illinois at Urbana-Chamapign	Abstract
18.6	Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices xxxx	Abstract
18.7	Student Presentation Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors Gem Shoute, Alex Ma, Amir Afshar, Ken Cadien and Douglas Barlage, University of Alberta	Abstract
18.8	Homogeneity control of powerelectronic device structures by advanced in-situ metrology Oliver Schulz, Armin Dadgar, Jonas Hennig, Oliver Krumm, Stephanie Fritze, Jürgen Bläsing, Hartmut Witte, Annette Diez, Alois Krost, LayTec AG, Institut for Experimentelle Physik	Abstract
18.9	High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology Sheng-Chun Wang, Hou-Kuei Huang, An-Sam Peng, Yi-Shu Lin, Lu-Che Huang, Chin-Fu Lin, Sam Chou, Houng-Chi Wei, and C.-G. Shih, Wavetek Microelectronics Corp.	Abstract
18.10	High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition Alex Ma, Amir Afshar, Gem Shoute, Kenneth Cadien, Douglas Barlage, University of Alberta	Abstract
18.11	Withdrawn
18.12	Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring T. Nishimiya, Y. Sakano, H. Ogiya, M. Hiramoto, S. Motoyama and P. Wood, Samco Inc.	Abstract
18.13	Student Presentation Observation on Slow Carrier Trapping in AlGaN/GaN Schottky and MIS Diodes Yi-Che Lee1*, Tsung-Ting Kao1, Joseph J. Merola1, Chuanxin Lian2, David Wang2, Daniel Hou2, and Shyh-Chiang Shen, Georgia Institute of Technology, Communication Semiconductors, LLC	Abstract
18.14	*GaAs pin Diode Devices and Technology for High Power applications at 600V and above.* Volker Dudek, Jens Kowalsky, Josef Lutz, CliftonGmbH, Chemnitz University of Technology	Abstract
18.15	*Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications* Nabil El-Hinnawy, Pavel Borodulin, Brian P. Wagner, Matthew R. King, John S. Mason Jr., Evan B. Jones, Jeff Hartman, Robert S. Howell, Michael J. Lee, and Robert M. Young, Northrop Grumman Electronic Systems	Abstract

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