GaAs ManTech On-Line Digest Search

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

2014 On-line Digest Table of Contents

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SESSION 1: PLENARY I
Chairs: Paul Cooke, IQE

Scott Sheppard, Cree, Inc.

1.1

Invited Presentation
Wireless Communications 2020
Scott Townley, Verizon Corporate Technology

 

Abstract

1.2

Invited Presentation
Trends in RF design and technologies for mobile wireless devices
Jay Kruze, Amazon (Lab 126)

 

 

1.3

 

Abstract

SESSION 2:  GaN Reliability & Characterization
Chairs: Shawn Burnham, HRL

Tom Low, Agilent

2.1

 

Abstract

2.2

 

Abstract

2.3

Invited Presentation
Finding (point) defects in (nitride-based) device structures using TEM imaging techniques

Petra Specht, University of California in Berkeley

 

 

2.4

Invited Presentation
Electrochemical Degradation Mechanisms in AlGaN/GaN HEMTs

Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios, Massachusetts Institute of Technology

 

Abstract

SESSION 3: MANUFACTURING 
Chairs:Gene Kohara, Marubeni NA

Arnold Chen, Aurrion

3.1.

Wavetek’s GaAs Manufacturing in 6” CMOS Fab
Weber Wei, Jeff Lin, MT Wu, Jackie Huang, Sam Chou, Amos Yen, CG Shih, Vance Su, MY Chen and Alex Chien, Wavetek Microelectronics Corporation, United Microelectronics Corporation

 

Abstract

3.2

Precision-guided Equipment Maintenance in a Modern Foundry – Case Study
Dimitry Gurevich, Ariel Meyuhas, Marino F. Arturo, MAX I.E.G. LLC

 

Abstract

3.3 

Implementing Simple Automation on Legacy Equipment without OEM Support        
Corey Anderson and Dana Schwartz, TriQuint Semiconductor

 

Abstract

3.4

A Case Study in Support of the Captive Fabrication Facility 
Gerhard S. Schoenthal, Thomas W. Crowe, Jeffrey L. Hesler, and Stephen H. Jones, Virginia Diodes, Inc.

 

Abstract

SESSION 4: YIELD 
Chairs: Corey Nevers, TriQuint Semiconductor

Judy Kronwaser, NovaSiC

4.1

GaAs Wafer Breakage Reduction
ShibanTiku, Bruce Darley, Manjeet Singh , Ernesto Ambrozio, Patrick Santos, Skyworks Solutions Inc.

 

Abstract

4.2

Cost Reduction Strategies for Equipment Repair and Maintenance
Heather Knoedler and Bob Delotto, Skyworks Solutions, Inc.

 

Abstract

4.3

Yield Improvement of Voltage Regulator in Next-Generation Wifi Front-End Module
Peng (Tom) Cheng, Patrick Carroll, Tom Rogers, Dain Miller, RF Micro Devices, Inc.

 

Abstract

4.4

Yield Enhancement of 0.25 μm GaN HEMT Foundry Technology
Wei-Chou Wang, Jhih-Han Du, Che-Kai Lin, Ming-Hung Weng, Cheng-Wen Peng, Wen-Kai Wang, Walter Wohlmuth, WIN Semiconductors Corp.

 

Abstract

4.5

Improvements to a mm-Wave GaN MMIC Process with Comprehensive and Efficient Process Control Monitoring
Shawn D. Burnham, David F. Brown, Robert M. Grabar, Dayward R. Santos, Dana C. Wheeler, Samuel J. Kim, Thomas C. Oh, Steven T.W. Chen and Miroslav Micovic, HRL Laboratories

 

Abstract

SESSION 5: NOVEL AND EMERGING OPTOELECTRONIC DEVICES 
Chairs: Patrick Fay, University of Notre Dame

Kevin Stevens, IQE

 

 

5.1

Student Presentation

Design and Modeling of Mid-Infrared Transistor-Injected Quantum Cascade Lasers
Kanuo Chen, John Dallesasse, University of Illinois at Urbana-Chamapign

 

Abstract

5.2

Student Presentation

Optimization of Selective Oxidation for 850 nm (IR) and 780 nm (Visible) Energy/Data Efficient Oxide-Confined Microcavity VCSELs
Kanuo Chen, John Dallesasse, University of Illinois at Urbana-Chamapign

 

Abstract

5.3

Student Presentation

Front-Side-Illuminated InGaAs/InP Modified UTC-Photodiodes With Cliff Layer
Wenjun Li a, Andreas Beling b, Joe Campbell b, Glen Hillier c, Chris Stender c, Noren Pan c, and Patrick Fay, University of Notre Dame, University of Virginia, MicroLink Devices, Inc.

 

Abstract

5.4

Student Presentation

Characterization of InxGa1-xAs Tunnel Junction Light-Emitting Transistors
Cheng-Han Wu and Chao-Hsin Wu, National Taiwan University

 

Abstract

5.5

Student Presentation

Spur-Free Dynamic Range Measurements of the Light-Emitting Transistor
PL.Lam,1,2 J.M.Dallesasse,1 G.Walter2, University of Illinois at Urbana-Champaign

 

Abstract

SESSION 6: POWER DEVICES 
Chairs: Toshihide Kikkawa, Transphorm Japan

Dave Wang, GCS

6.1

Student Presentation
Stability and Temperature Dependence of Dynamic RON in AlN-Passivated AlGaN/GaN HEMT on Si Substrate

Zhikai Tang, Sen Huang*, and Kevin J. Chen, Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science

 

Abstract

6.2

Effect of Multi-Field Plates on GaN-on-Silicon HEMTs Reverse Breakdown and Leakage Characteristics
T. Boles, D. Carlson, L. Xia, A. Kaleta, C. McLean, D. Jin, T. Palacios, G. W. Turner, R. J. Molnar, MACOM Technology Solutions, Lincoln Laboratory

 

Abstract

6.3

Recent Progress in GaN-on-Diamond Device Technology
J.D. Blevins, G.D. Via, K. Chabak, A. Bar-Cohen, J. Maurer, A. Kane, Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency (DARPA) Booz Allen Hamilton

 

Abstract

6.4

Boron-Doped P Nanocrystalline Diamond Gate Electrode for AlGaN-GaN HEMTs
Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Marko J. Tadjer, Tatyana I. Feygelson, Jennifer K. Hite, Bradford B. Pate, Charles R. Eddy, Jr., Francis J. Kub, Naval Research Laboratory

 

Abstract

6.5

Student Presentation

Npn GaN/InGaN Heterojunction Bipolar Transistors Using a Palladium-Based Contact Scheme
Yi-Che Lee, Tsung-Ting Kao, Jeomoh Kim, Mi-Hee Ji, Theeradetch Detchphrom, Russell D. Dupuis and Shyh-Chiang Shen, Georgia Institute of Technology

 

Abstract

SESSION 7: PROCESS - METALLIZATION 
Chairs: Keith Wieber, RFMD

Marty Brophy, Avago

7.1

 

Abstract

7.2

Pad Adhesion Investigation and Layout Optimization
Xiaokang Huang, David Gonzalez, Duofeng Yue, Jinhong Yang*, Jeremy Middleton*, Van Tran, Bang Nguyen, Harold Isom, TriQuint Semiconductor, Inc.

 

Abstract

7.3

 

Abstract

7.4

Yield improvement of metal-insulator-metal capacitors in MMIC fabrication process based on AlGaN/GaN HFETs
S. A. Chevtchenko, S. Freyer, L. Weixelbaum, P. Kurpas, and J. Würfl, Ferdinand-Braun-Institute

 

Abstract

7.5

Improved Availability for Copper Plater Tools
Patrick Santos, Jens Riege, Skyworks Solutions, Inc.

 

Abstract

SESSION 8: NORMALLY OFF GaN POWER DEVICES
Chairs: Naveem Tipirneni, Texas Instruments

Ming-Yih Kao, TriQuint Semiconductor

8.1

A new approach for GaN normally-off power transistors: Lateral recess for positive threshold voltage shift
P. Waltereit, A. Leuther, J. Rüster, H. Czap, R. Iannucci, S. Müller, M. Mikulla and O. Ambacher, Fraunhofer Institute

 

Abstract

8.2

Influence of Atomic Hydrogen Treatment on the Threshold Voltage of p-Gate High Voltage GaN Transistors
Erofeev E.V., Arykov V.S., Kagadei V.A, Stepanenko M.S., Kazimirov A.I., Fedin I.V., Research and Production Company Micran

 

Abstract

8.3

Student Presentation

High-performance normally-off GaN MIS-HEMTs with dual gate insulator employing PEALD SiNx interfacial layer and RF-sputtered HfO2
Woojin Choi, Hojin Ryu, Ogyun Seok, Minseok Kim, Ho-Young Cha, and Kwang-Seok Seo, Seoul National University

 

Abstract

8.4

Student Presentation
The Effects of Gate Metals on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors
Finella Lee, Liang-Yu Su, and JianJang Huang*, National Taiwan University

 

Abstract

8.5

Student Presentation

Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance
T.-T. Kao*, J. Kim, Y.-C. Lee, M.-H. Ji, T. Detchprohm, R. D. Dupuis, and S.-C. Shen, Georgia Institute of Technology

 

Abstract

SESSION 9:  PROCESS-THIN FILMS
Chairs: Steve Mahon, Cascade Microtech

Shiban Tiku, Skyworks Solutions

9.1

ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for
GaAs HBT Technology

Jiro Yota, Kai Kwok, and Ravi Ramanathan, Skyworks Solutions, Inc.

 

Abstract

9.2

Thermal Property of WNiSi Thin Film Resistor
Xiaokang Huang, Duofeng Yue, Arif Choudhury, Paul Horng, Elisabeth Marley, Jinhong Yang*, Craig Hall, Harold Isom, TriQuint Semiconductor, Inc.

 

Abstract

9.3

An E-beam Evaporation Deposition Process for Tantalum Nitride Thin Film Resistors
Lam Luu-Henderson, Shiban Tiku, Hong Shen, Richard Bingle, Daniel Weaver, Gary Hu, Cristian Cismaru, Mike Sun, and Ravi Ramanathan Hong Shen, Skyworks Solutions, Inc., formerly of Skyworks Solutions, Inc.

 

Abstract

9.4

Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
Kevin Voon, Kyle Bothe, Pouyan Motamedi, Douglas Barlage, Ken Cadien, University of Alberta

 

Abstract

9.5

Moisture resistance of insulating films for compound semiconductor devices
Tomoki Oku, Manabu Okumura, Masahiro Totsuka, Toshihiko Shiga and Masayoshi Takemi, Mitsubishi Electric Corporation, Melco Semiconductor Engineering Corp.

 

Abstract

SESSION 10: PROCESS - GaN (1)
Chairs: Karen Moore, Freescale

Dane Henry, RFMD

10.1

An Optical 150-nm Y-Gate Process for InAlN/GaN HEMTs
Hiroyuki Ichikawa, Isao Makabe, Yasunori Tateno, Ken Nakata and Kazutaka Inoue, Sumitomo Electric Industries, Ltd.

 

Abstract

10.2

Implementation of slanted sidewall gates technology in the fabrication of S-, X-, and Ka-band AlGaN/GaN HEMTs.
K. Y. Osipov, S. A. Chevtchenko, O. Bengtsson, P. Kurpas, F. Brunner, N. Kemf and J. Würfl, Ferdinand-Braun-Institute

 

Abstract

10.3

Sputtered Iridium Gate Module for GaN HEMT with Stress Engineering and High Reliability
Richard Lossy , Hervé Blanck and Joachim Würfl, Ferdinand-Braun-Institute, United Monolithic Semiconductors

 

Abstract

10.4

Student Presentation

Improved current collapse inAlGaN-GaN HEMTs by O2plasma treatment
Yoshiki Sakaida, Hirokuni Tokuda and Masaaki Kuzuhara, University of Fukui,

 

Abstract

10.5

Student Presentation

High Performance Self-aligned AlN-GaN MISHEMT with In-situSiNxGate Dielectric and Regrown Source-Drain
Xing Lu, Jun Ma, Peiqiang Xu, Huaxing Jiang and Kei May Lau, Hong Kong University of Science and Technology

 

Abstract

SESSION 11: TRANSISTOR TECHNOLOGY
Chairs: George Henry, Northrup Grumman (ES)
Mike Sun, Skyworks Solutions

11.1

An InGaP/GaAs DHBT with an Integrated Wide-Tuning-Range Varactor for Broad Band Monolithic VCO Applications
Yuefei Yang, Dave Wang, Wing Yau, Bryan Lee, Dave Rasbot, Hau Tan, and Daniel Hou, Global Communication Semiconductors, LLC

 

Abstract

11.2

Student Presentation

Surface Recombination and Performance Issues of Scaling Submicron Emitter on Type-II GaAsSb
Huiming Xu, Eric Iverson, and Milton Feng, University of Illinois at Urbana-Champaign

 

Abstract

11.3

Improved GaAs HBT Device Linearity with Flattened Cutoff Frequency Curve
Cristian Cismaru and Mike Sun, Skyworks Solutions, Inc.

 

Abstract

11.4

Improvement of Transconductance Flatness of GaAs MESFETs
Debdas Pal, Alan Noll and Kimberly Conway, MACOM

 

Abstract

11.5

High Performance GaAs RF Switch with a P-Type Capping Layer
K. Takeuchi, S. Taniguchi, M. Yanagita, Y. Sasaki, M. Nakamura, and S. Wada, Sony Corporation

 

Abstract

SESSION 12: PROCESS - GaN (2)
Chairs: Hidetoshi Kawasaki, Sony

Michelle Bourke, Oxford Instruments

12.1

The First 0.2um 6-Inch GaN-on-SiC MMIC Process
R. Isaak , J. Diaz, M. Gerlach, J. Hulse, L. Schlesinger, P. Seekell, W. Zhu, W. Kopp, X. Yang, A. Stewart, K. Chu, P. C. Chao, X. Gao, M. Pan, D. Gorka, M. Olive1 and I. Eliashevich, MEC, BAE Systems, IQE

 

Abstract

12.2

Student Presentation

Process Variations to Normally-off GaN HEMTs on Si with p-GaN Cap Layer
Liang-Yu Su, Finella Lee, and JianJang Huang, National Taiwan University

 

Abstract

12.3

Effects of Field Plate and Epitaxial Wafer on AlGaN/GaN HEMTs with Active Harmonic Tuning
Keiichi Matsushita, Hiroyuki Sakurai, Akio Miyao, Yukio Takahasi, Kazutaka Takagi, Toshiba Corp.

 

Abstract

12.4

Student Presentation

77 GHz Power Amplifier MMIC using 0.1 μm Double-Deck Shaped (DDS) field-plate gate AlGaN/GaN HEMTs on Si Substrate
Dong-Hwan Kim, Ji-Hoon Kim, Su-Keun Eom, Min-Seong Lee, and Kwang-Seok Seo, Seoul National University

 

Abstract

12.5

Student Presentation

The Effects of SF6Plasma and in-situ N2Plasma Treatment on Gate Leakage, Subthreshold Slope, and Current Collapse in AlGaN/GaN HEMTs
Neung-Hee Lee, Woojin Choi, Minseong Lee, SeonhongChoi, and Kwang-Seok Seo, Seoul National University

 

Abstract

SESSION 13: EPITAXIAL GROWTH
Chairs: Ruediger Schreiner, Aixtron SE

Andy Souzis, II-VI, Inc.

13.1

Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures
Jie Su, Balakrishnan Krishnan, Ajit Paranjpe and George D. Papasouliotis, Veeco

 

Abstract

13.2

SiN/Ge Lift-off: A Method for Patterning Films Deposited at High Temperature
A. MaaBdorf, M. Zorn, O. Schulz, J.-T. Zettler, and M. Weyers, Ferdinand-Braun-Institute, Jenoptik Diod Lab, LayTec AG

 

Abstract

13.3

Translating Epi Structures into Growth Recipes — Manufacturability Concerns
Guoliang Zhou and Mark Borek, Skyworks Solutions, Inc.

 

Abstract

13.4

GaN on Silicon Growth by MOCVD: A Mechanistic Approach to Wafer Scaling
Yu Cao, Oleg Laboutin, Chien-Fong Lo, Kevin O’Connor, Daily Hill, and Wayne Johnson, IQE

 

Abstract

13.5

The Longer life wafer tray for MOCVD -AlN ceramics (FAN090) by solid phase sintering
N.Furukoshi ,K.Mutoh, Y.Fukunaga,T.Yamamura, T.Iwata, Furukawa DenshiI Co.,Ltd.

 

Abstract

SESSION 14: PROCESS - BACKEND
Chairs: Russ Westerman, Plasma-Therm

Heribert Zull, Osram

14.1

Quality and throughput improvement of GaN/SiC wafer saw with the addition of ultrasonic power          
Fraser Wang, Vincent Hsu, Stanley Hsieh, I-Te Cho, Walter Wohlmuth, WIN Semiconductors Corp.

 

Abstract

14.2

Method for Forming Through Wafer Vias in GaN on SiC Devices and Circuits

Chia-Hao Chen, Yu-Wei Chang, Ming-Hung Weng, Ricky Chang, Shih-Hui Huang, Fraser Wang, Yi-Feng Wei, Stanley Hsieh, I-Te Cho, Walter Wohlmuth, WIN Semiconductors Corp

 

Abstract

14.3

Productivity Improvement Using Plasma-based Die Singulation
D. Pays-Volard, L. Martinez, K. Mackenzie, T. Lazerand, and R. Westerman, D. Lishan, Plasma-Therm LLC,

 

Abstract

14.4

Diamond-coated High Density Vias for Silicon Substrate-side Thermal Management of GaN HEMTs
Marko J. Tadjer, Karl D. Hobart, Tatyana I. Feygelson, Travis J. Anderson, Andrew D. Koehler, Ashu Wang, Fernando Calle, Bradford B. Pate, Fritz J. Kub, American Society for Engineering Education, United States Naval Research Lab. Universidad Politecnica de Madrid

 

Abstract

14.5

Improvements in Thin Wafer Handling - Equipment and Material Impacts
Molly Hladik, Pavan Bhatia, Brewer Science, TriQuint Semiconductor

 

Abstract

SESSION 15: GaAs CHARACTERIZATION
Chairs: Chris Youtsey, Microlink Devices

Jansen Uyeda, Northrop Grumman (AS)

15.1

Student Presentation
Process control in GaAs manufacturing using Chua’s circuit
Evgeny Kuxa, Anthony E. Parker, Simon J. Mahony, Anna Dadelloy, Wen-Kai Wangz, Michael C. Heimlich, Macquarie University, Sydney Design Centre, Macom Tech. Solutions, WIN Semiconductors

 

Abstract

15.2

High Speed Highly Parallel Multi-site GaAs Diesort Testing
Martin J. Brophy, Brian Bergeson, Royce Grover, and Keith Quick, Avago Technologies, Keithley Instruments, Inc.

 

Abstract

15.3

Developing Power Amplifier Module Standards for Reliability Qualification
William J. Roesch, TriQuint Semiconductor, Inc.

 

Abstract

15.4

A Robust Design of MMIC using Taguchi Method         
A. Oya, A. Maekawa, H. Yamamoto, T. Yamamoto, T. Sato, S. Sano and N. Kurokawa, Sumitomo Electric Device Innovations, Inc.

 

Abstract

15.5

TransImpedance Amplifiers – what’s the buzz?         
Debbora Ahlgren, Cascade Microtech

 

Abstract

SESSION 16: MATERIALS FOR GaN TECHNOLOGY
Chairs: Yohei Otoki, Hitachi Metals

Russ Kremer, Freiberger CM

16.1

Process-dependent properties of InAlN surface and ALD-Al2O3/InAlN interface
M. Akazawa, M. Chiba, and T. Nakano, Hokkaido University

 

Abstract

16.2

Need for Defects in Floating-Buffer AlGaN/GaN HEMTs
M.J. Uren, M. Silvestri, M. Cäsar, J.W. Pomeroy, G.A.M. Hurkx*, J.A. Croon+, J. Šonský*, and M. Kuball, University of Bristol, NXP Semiconductors Belgium and Netherlands

 

Abstract

16.3

Reverse Leakage Current and Breakdown Voltage Improvements in GaN HEMTs and GaN Schottky Diodes
Timothy Boles, Ling Xia, Allen Hanson, Anthony Kaleta, and Chris McLean, MACOM Technology Solutions

 

Abstract

16.4

Growth of bulk GaN Crystal by Na Flux Method
Y. Mori,M. Imade, M.Maruyama,M. Yoshimura, Osaka University

 

Abstract

SESSION 17: HETEROGENEOUS INTEGRATION
Chairs: John Blevins, AFRL

Dave Meyer, NRL

17.1

Advanced bonding techniques for photonic integrated circuits
M.Eibelhuber, T. Matthias, T. Uhrmann, V. Dragoi and P. Lindner, EV Group

 

Abstract

17.2

Fabrication of GaN MISHEMTs Fabricated From GaN Grown By MOCVD on High Resistance 200mm <111> Si Substrates
Jeffrey LaRoche, Kelly Ip, Mark Breen, Yu Cao, John P. Bettencourt, Doug Guenther, Gabe Gebara, Oleg Laboutin, Chien-Fong, Tina Trimble, Wayne Johnson and Thomas Kazior, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE

 

Abstract

17.3

Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors
J. Pomeroya*, M. Bernardonia, D.C. Dumkab, D.M. Fanningb, M. Kuballa, University of Bristol, TriQuint Semiconductor

 

Abstract

17.4

Invited Presentation

The DARPA Diverse Accessible Heterogeneous Integration (DAHI) Program: Convergence of Compound Semiconductor Devices and Silicon-Enabled Architectures
Daniel S. Green, Carl L. Dohrman, Tsu-Hsi Chang, DARPA, Booze Allen Hamilton, HetInTec Corp.

 

Abstract

SESSION 18:  INTERACTIVE FORUM
Chairs: Nick Kolarich, Epiworks

Kelli Rivers, Vacuum Engineering and Material

Suzanne Combe, TriQuint Semiconductor

18.1

Student Presentation
Threading Dislocations in GaN HEMTs on Silicon: Origin of Large Time Constant Transients?
Saptarsi Ghosh*, Ankush Bag, Partha Mukhapadhay, Syed Mukulika Dinara, Sanjay .K. Jana, Sanjib Kabi, and Dhrubes Biswas, Indian Institute of Technology

 

Abstract

18.2

Student Presentation
Measurement of Base Transit Time and Minority Electron Mobility in GaAsSb-Base InP DHBTs
University of Illinois at Urbana-Champaign, Agilent Technologies

 

Abstract

18.3

 

Abstract

18.4

High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design
Rei-Bin Chiou, Ta-Chuan Kuo, Cheng-Kuo Lin, Shu-Hsiao Tsai, Shin-Yi Ho, Tung-Yao Chou, Dennis Williams, and Yu-Chi Wang, WIN Semiconductors Corp.

 

Abstract

18.5

Student Presentation

AlGaN/GaN MOS-HEMTs using RF magnetron Sputtered SiO2 Gate Insulator and Post-Annealing Treatment
Liang Pang, Ogyun Seok, *Kyekyoon (Kevin) Kim, University of Illinois at Urbana-Chamapign

 

Abstract

18.6

Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
xxxx

  Abstract

18.7

Student Presentation

Low-Voltage and Low-Cost ZnO Based Ultra-Thin-Film Transistors
Gem Shoute, Alex Ma, Amir Afshar, Ken Cadien and Douglas Barlage, University of Alberta

 

Abstract

18.8

Homogeneity control of powerelectronic device structures by advanced in-situ metrology
Oliver Schulz, Armin Dadgar, Jonas Hennig, Oliver Krumm, Stephanie Fritze, Jürgen Bläsing, Hartmut Witte, Annette Diez, Alois Krost, LayTec AG, Institut for Experimentelle Physik

 

Abstract

18.9

High-Frequency Small-Signal and Noise Characterization of the E-mode pHEMT Fabricated Using Advanced ED25 Process Technology
Sheng-Chun Wang, Hou-Kuei Huang, An-Sam Peng, Yi-Shu Lin, Lu-Che Huang, Chin-Fu Lin, Sam Chou, Houng-Chi Wei, and C.-G. Shih, Wavetek Microelectronics Corp.

 

Abstract

18.10

High Breakdown Voltage ZnO Thin Film Transistors Grown by Low Temperature Atomic Layer Deposition
Alex Ma, Amir Afshar, Gem Shoute, Kenneth Cadien, Douglas Barlage, University of Alberta

 

Abstract

18.11

Withdrawn

 

 

18.12

Recess Etching Process for AlGaN/GaN-HFET Devices Using In-Situ Monitoring
T. Nishimiya, Y. Sakano, H. Ogiya, M. Hiramoto, S. Motoyama and P. Wood, Samco Inc.

 

Abstract

18.13

Student Presentation

Observation on Slow Carrier Trapping in AlGaN/GaN Schottky and MIS Diodes
Yi-Che Lee1*, Tsung-Ting Kao1, Joseph J. Merola1, Chuanxin Lian2, David Wang2, Daniel Hou2, and Shyh-Chiang Shen, Georgia Institute of Technology, Communication Semiconductors, LLC

 

Abstract

18.14

GaAs pin Diode Devices and Technology for High Power applications at 600V and above.
Volker Dudek, Jens Kowalsky, Josef Lutz, CliftonGmbH, Chemnitz University of Technology

 

Abstract

18.15

Improvements in GeTe-Based Inline Phase-Change Switch Technology for RF Switching Applications
Nabil El-Hinnawy, Pavel Borodulin, Brian P. Wagner, Matthew R. King, John S. Mason Jr., Evan B. Jones, Jeff Hartman, Robert S. Howell, Michael J. Lee, and Robert M. Young, Northrop Grumman Electronic Systems

 

Abstract

 

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