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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
1996 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org

SESSION I: HBT Chair: Milton Feng, University of Illinois
1.1	Removal of Hydrogen from the Base of Carbon-doped HBTs by Ex-situ Rapid Thermal Annealing QJ. Hartmann, M.T. Fresina, D.A. Ahmari, H. Hwangbo, A. Yung, J.E. Baker, and G. E. Stillman University of Illinois, Microelectronics Laboratory
1.2	Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors with Two-step SiNx or InyGaP Passivation Layers S. Ahmad Tabatabaei, F.G. Johnson, D.R. Stone Joint Program for Advanced Electronic Materials, Electrical Engineering Department, and Laboratory for Physical Sciences, University of Maryland
1.3	Manufacturable Fabrication Process for Self-Aligned, Thin-Base InGaP/GaAs HBTs M.T. Fresina, D.A. Ahmari, Q.J. Hartmann, D.W. Barlage, M.S. Hines, A. Yung, M. Feng and G. E. Stillman University of Illinois, Microelectronics Laboratory
1.4	InP/InGaAs HBYs with 1.5 V-Single Bias Voltage for L-Band Power Applications H. Shigematsu, T. Iwai, H. Yamada, and K. Joshin Fujitsu Laboratories Ltd.
1.5	The Process Design and Fabrication of Monolithic OEIC Lightwave transmitter with 1.55 um MQW Laser and HBT Driver Circuit Dong Yi, Li Yudong, Zeng Qingming, Cai Keli, Liang Chunguang and Liu Shiyong Hebei Semiconductor Research Institute, Electronic Science & Technology Research Institute of Jilin University
SESSION II: PROCESS I Chair: Paul Becker, Lockheed Martin
2.1	Recess Etching Technique Comparisons for MESFET, HFET, PHEMT and HBT Technologies Keith A. Salzman Texas Instruments, Inc.
2.2	Controlled Digital Etching of GaAs for Precise Gate Recess Formation in MESFET, HEMT, and pHEMT Device Fabrication G. DeSalvo, J. Ebel, C. Bozada, J. Barrette, C. Cerny, R. Dettmer, J. Gillespie, C. Havasy, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J. Sewell, and D. Via Electron Devices Division, Avionics Directorate, Wright Laboratory, Wright-Patterson Air Force Base
2.3	Automated Hot Plate Alloy for MMIC Manufacturability E. Stonebraker and M. Durschlag Raytheon Co, Lam Research, VLSI Technology Inc.
2.4	Improved Ohmic Contacts to PHEMTs Using Germanium Rich Metal Stacks M. Durschlag Raytheon Co., Advanced Device Center
SESSION III: DESIGN FOR MANUFACTURABILITY Chair: Art Geissberger, Alpha Industries
3.1.	Electrostatic Discharge Protection for GaAs Devices and MMIC Circuits Abbas AmiriChimeh, M.D., Dr. David P. Klemer, Dr. Ronald L. Carter, Dr. Burt Marks, The University of Texas at Arlington, Texas Instruments, Inc.
3.2	Design and Fabrication of Coplanar Ka-Band Monolithic Integrated Circuits J.R. Middleton, D.S. Chen, C.C. Teng, J. Kruse, D. Scherrer, R. Shimon, D. Barlage, M. Heins, and M. Feng University of Illinois at Urbana-Champaign
3.3	GaAs MMIC Chip Compaction of Broad Band X-Band High Power Amplifiers R. Wang, A. Kurdoghlian, M. Cole, T. Chi, C. Chang, Z. Bardai, T. Midford Hughes Aircraft Company
3.4	Correlation of Small Signal Performance of Ion-Implanted Devices to fundamental Physical Variables using 2-D Numerical Simulation Marcus A. King, John Beall, Sam Pritchett, Kerri Whelan Daren Bridges and Christian Yots Texas Instruments, Inc.
SESSION IV: MANUFACTURING Chair: Steve Evans, Texas Instrument / Bruce Bernhardt, Motorola
4.1	High Volume Testing of RF & Analog GaAs Integrated Circuits Phillip W. Wallace, Mark A. Bonelli Farzin Fallah, David S. Faye Sergei Kent, Art A. McComas, Joseph J. Mickey, Dave F. Miller, Rick C. Salvador, Robert W. Schrock, Anadigics, Inc.
4.2	Enhanced Manufacturability of GaAs Ion Implanted MESFET Technology for Monolithic Microwave Integrated Circuits M.R. Wilson, R. Balda, C. Della, J. Gilbert, E. Huang, and L.S. Klingbeil Motorola Semiconductor Products Sector
4.3	Low Cost X-Band Monolithic Integrated LNA Using Direct Ion Implanted GaAs MESFETs A. Kurdoghlian, T. Chi, C Chang, Z Bardai, D. Tonomura, C. Pao, T. Midford, D. Li, M. Cole, T. Bguyen Hughes Aircraft Company
4.4	Yield Enhancement for Commercial PHEMT Devices and MMICs T. Kao, C. Hua, F. Oshita, J. McCulloch, A. Lee, Y. Chung and D. Day Hewlett-Packard, CMCD Division
4.5	GaAs Fabrication Simulation Modeling Chester L. Brewer, H. George Henry, and Andre K. Rush Westinghouse ESG
SESSION V: RELIABILITY Chair: Ki-Woong Chung, LG Electronics
5.1	High Temperature Accelerated Life Test of >1GHz Digital GaAs Logic Brant Besser Motorola Government and Space Technology Group
5.2	Class B Accelerated Life Testing of GaAs FETs R. Khanna, A. Geissberg, .A. Tkachenko, J. Jorgenson, S.G. Munro, D. Bartle, D. Whitefield Alpha Industries
5.3	Hydrogen Effects on GaAs Device Reliability Sammy Kayali Jet Propulsion Laboratory California Institute of Technology
5.4	NiGeW Ohmic Contracts on GaAs Heterostructure Field Effect Transistors J.H. Huang, S. Tehrani, M. Durlam, M.J. Martinez, E. Schirmann, N. Cody Motorola, Inc.
SESSION VI: GaAs OVERVIEW Chair: Jim Hutchby, Research Triangle Institute
6.1	EuroGaAs – The European GaAs Industry Dr. I.G. Eddisson and J.A. Turner Department of Trade and Industry, London, Consultant to GEC – Marconi Materials Technology Ltd.
6.2	GaAs MESFET Manufacturing Technologies in Japan Dr. Hiroshi Nakamura Oki Electric Industry Co., Ltd.
6.3	The GaAs Industry in North America D. Gary Lerude Texas Instruments
SESSION VII: INTERACTIVE FORUM Chairs: Daniel Rosenblatt, Samsung Microwave
7.1	Statistical Database & Electronic Data Management for GaAs Products Moshe Gat, Charles Baughman, Vince Du, Wesley Fields, Jeff Raggio, Andreas Tsafos Hewlett-Packard
7.2	A New Approach to Substrate Temperature Measurement in MOCVD Rotating Disk Reactors A.I. Gurary, R.A. Stall, W.J. Kroll, A.G. Thompson, and N.E. Schumaker EMCORE Corporation
7.3	Advanced GaAs and InP base Epi-wafers for Volume Production T.T. Childs, T. Nohava, S. Mukherjee, V. Sokolov and C. Sullivan
7.4	FSF’s Solid Phase Epitaxy Cost Effective Revolutionary GaAs Processing and Manufacturing Technology Dr. F. Sepehry-Fard F.S.F. Research Technologies, Inc.
7.5	Electronic Access of Graphical Data Packages for a Wafer Fabrication Facility John Day Raytheon Company
7.6	Efficiency, Throughput and Yield consideration for GaAs Epitaxy equipment F. Schulte M. Deschler, G. Strauch, H. Jurgensen
7.7	Characterization of the Backgating Effect at Microwave Frequency C.C. Temg, D.S. Chen, D. Scherrer, D. Barlage, M. Feng University of Illinois at Urbana-Champaign
7.8	The Relocation of Two Riber Production MBE Systems W.E. Quinn, T.W. Rondina and S.T. Mulligan Raytheon Company
7.9	A Complete 3 Volt Transceiver for PCS Applications C. McCarroll, D. Boire, J. Sanctuary, M. Blum, J. Coronella, M. Casseres, S. Mass Sanders, a Lockheed Martin Company
7.10	Low-Power, Wideband, High-Speed, Linear, AlGaAs/GaAs HBT Monolithic Successive Detection Logarithmic Amplified (SDLA) G. Kuehner, P. Enquist, T. Markas AEL Industries, Inc.
7.11	High Resolution X-Ray Diffraction Characterization of Pseudomorphic HEMT Epitaxial Structures K. Bacher, D. Hartzell, T. Hierl, D.C. Martel, S. Massie, R.S. Rai Quantun Epitaxial Designs
7.12	In Situ Growth Rate and Temperature Measurement in Molecular Beam Epitaxy Using Pyrometric Interferometry and Diffused Reflectance Spectroscopy P. Thompson, J. Zhou, L. Flanders, and H.P. Lee University of California, Irvine
7.13	A Test Structure for Targeting the MBE Growth of AlGaAs/InGaAs/GaAs Pseudomorphic Transistors Forrest Kellert, James Chang, George Patterson Hewlett-Packard Company
SESSION VIII: PROCESS II Chair: Ding Day, Hewlett-Packard
8.1	0.2 Micron Gate Lithography Using Optical Stepper and PSM Technologies Lawrence G. Studebaker Hewlett-Packard Company
8.2	DOE Optimization of A Three-Resist 0.25um T-Gate Process K.M. Renaldo, H.G. Henry, H.C. Cramer, K.D. Larson Westinghouse Electric Corp.
8.3	An Angle-Evaporation Technique for Fabricating 0.2 um Gamma-Gates for Metal-Semiconductor Field-Effect Transistors C.Y. Lee W.R. Hitchens, W.A. Strifler, R.D. Remba Watkins-Johnson Company
8.4	InP-Based Mixed Signal/Mixed Device Technology W.E. Stanchina, J.J. Brown, M. Hafizi, R.H. Walden, H.C. Sun, M. Rodwell Hughes Research Laboratories, University of California at Santa Barbara
SESSION IX: THERMAL MANAGEMENT Chairs: Dominique Pons Thomson-CSF
9.1	Thermal Management in GaAs Devices and Components R.L. Hale Raytheon Company
9.2	Thermal Management of High Power HBTs Burhan Bayraktaroglu Westinghouse Electric Corporation
9.3	A High-Yield Emitter Process for Realizing Self-Aligned Base, Thermally-Shunted HBTs J. Sewell, J. Barrette, C. Bozada, R. Dettmer, T. Jenkins, M. Mack, R. Anholt, G. DeSalvo, J. Eb el, J. Gillespie, C. Havasy, C. Ito, L. Liou, K. Nakano, C. Pettiford, T. Quach, G. Via United States Air Force Wright Laboratory, Gateway Modeling
SESSION X: MATERIALS Chair: Kenneth Elliott, Hughes Research Lab
10.1	Fabrication of double planar doped Pseudomorphic HEMT devices from MOCVD grown material C. Beckham, R.A. Stall, A.G. Thompson, L. Aina, K. Seipel EMCORE Corporation, M/A-COM Inc.
10.2	Throughput and Yield improvement of MOCVD materials growth in high volume GaAs/Ge based space solar cell production. Michael H.T. Yang, Charlie Huang, Scott Khemthong, Gloria Jara Frank Ho Applied Solar Energy Corporation
10.3	Method for Characterization of III-V Epitaxial Structures Incorporating an Etch Stop Layer Daniel M. Dobkin, Ronald D. Remba, William R. Hitchens, Carol Y. Lee, Camie S. Dalmacio, Scott Snider, Enigmatics, Watkins-Johnson Company
10.4	Vertical Gradient Freeze GaAs for Ion-Implantation Applications M.J. Brophy, X. Liu, T. Young, H.I. Helava M. Houng, B. Lauterwaser, C. Jacobs TriQuint Semiconductor, American Xtal Technology, Raytheon Company
SESSION XI: PROCESS III Chairs: Maria Ristow, Watkins-Johnson
11.1	GaAs pHEMT Device Passivation Technology for High Efficiency Power Amplifier Applications J.J. Brown, A.E. Schmitz, M. Hu, J.A. Pusl, J.B. Shealy, D.P. Docter, M.A. Thompson, L.D. Nguyen, C. Constantine Hughes Research Laboratories, Hughes Space and Communications Company, PlasamaTherm Inc.
11.2	The Effect of 02 Plasma to Activation of Si Implants in GaAs Yoshihiro Saito Shigeru Nakajima, Takeshi Fukuzawa, Hideaki Nishizawa Sumitomo Electric Industries, Ltd.
11.3	Manufacturing Concerns of Reactively Sputtered Aluminum Nitride L.S. Klingbeil, M.R. Wilson Motorola Semiconductor Products Sector
11.4	Fabrication and Characterization of Polyimide Multilayer Structures for MMIC Applications Q.H. Wang, T. Gokdemir, D. Budimir, U. Karacaoglu, A.A. Rezazadeh, I.D. Robertson Kings College, University of London, The Strand

GaAs ManTech On-Line Digest Search

The International Conference on Compound Semiconductor Manufacturing Technology "Sharing Ideas Throughout the Industry" 1996 On-line Digest Table of Contents Order everything you need with our convenient on-line order form or contact Margaret Doyle at mdoyle@gaasmantech.org

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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
1996 On-line Digest Table of Contents

Order everything you need with our convenient on-line order form
or contact Margaret Doyle at mdoyle@gaasmantech.org