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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2000 On-line Digest Table of Contents

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1a	Compound Semiconductor Requirements for Fiber Optic Telecommunications	Abstract
	Mike Scott, Nortel Networks
1b	Present and Future of GaAs Technologies in Japan	Abstract
	Masumi Fukuta, Fujitsu Quantum Devices Ltd.
2a	A New Production Solution for High Selective and Low-Damage Etching of GaAs-Based Devices	Abstract
	Jewon Lee, Mike Debre, Dave Johnson, Jay Sasserath, Plasma-Therm, Inc.
2b	Improvement of Surface Morphology for InGaP HBT	Abstract
	G.K. Essilfie, T.S. Low, Hengchang Chou, D.K. Kuhn, M. DeLaCruz, D.C. D'Avanzo, Agilent Technologies
2c	III-V Dry Etching by CCD-controlled in situ Interferometry	Abstract
	W. John, L. Weixelbaum, H. Wittrich, G. Frankowski, J. Wurfl, Ferdinand-Braun Institute.
2d	Electrochemical Etching Impact On GaAs Process, Mask Design and Device Performance	Abstract
	I. Hallakoun, T. Boterashvili, G. Bunin, Y. Shapira
2e	Corrosion Behavior and Surface Studies of GaAs in Acidic Solutions	Abstract
	C.A. Steer, J.L. Luo, D.G. Ivey. Dept. of Chemical and Materials Engineering, University of Alberta
3a	InP HBT Technology and Applications	Abstract
	A.K. Oki, D.C. Streit, K.W. Kobayashi, A. Guiterrez-Aitken, L.T. Tran, T. Block, P. Chin, P.S. Grossman, F. Yamada, D. Sawdai, M.D. Lammert, M. Wojtowicz, E. Kaneshire, K. Sato, G. Lesslie, L. Yang, H.C. Yen, TRW Inc.
3b	Advanced InP/InGaAs HBTs Technology for Low-Power Lightwave Communication Circuit Applications (Invited)	Abstract
	S. Yamahata, H. Nakajima, M. Ida, E. Sano, Y. Ishii. NTT Photonics Laboratories
3c	WITHDRAWN
3d	RF-LDMOS: A Silicon-Based, High Power, High Efficiency Linear Power Amplifier Technology.	Abstract
	W. Burger, E. Agyekum, O. Ayoola, G. Bouisse, W. Brakensiek, H. Brech, B. Davidson, C. Dragon, G. Formicone, G. Funk, E Krvavac, D. Lamey, W.W. Lau, G. Ma, B. Pryor, X. Ren. Motorola, Inc.
4a	Compound Semiconductors in Wireless Communications Systems	Abstract
	Anthony A. Triolo, Lucent Technolgies
4b	Integration of GaAs MMIC Technology in Commercial mm-Wave SATCOM and LMDS Transceivers	Abstract
	Roberto Alm, Raytheon RF Components
4c	Very High Efficiency and Low Cost Power Metamorphic HEMT MMIC Technology	Abstract
	P.C. Chao, K.C. Hwang, D.W. Tu, J.S.M. Liu, O. Tang, K. Nichols. Sanders, A Lockheed Martin Company
4d	Packaging Technologies for RFIC's: Increasing Integration	Abstract
	Albert C. Imhoff, Jr. M/A-COM Semiconductor
5a	Etching InP with H2, BCI3 and Ar	Abstract
	Edwin Sabin, TRW
5b	A Design of Experiment for High Throughput GaAs Via Etch by Reactive Ion Etch	Abstract
	Juifen Lee, Hungchun Tsai, Yee-Shyi Chang, National Tsing-Hua University
5c	Breaking the 1000 Wafers/Week Barrier Through Substrate Via Process	Abstract
	K.M. Adams, L.S. Klingbeil, Motorola, Inc.
5d	Adapting Electrostatic Chucks for Dry Etching of GaAs	Abstract
	D. Tossell, K. Powell, M. Bourke, Y Song. Trikon Technologies Ltd.
6a	A Comparative Study of As, Sb and P-based Metamorphic HEMT	Abstract
	D. Lubyshev, W.K. Liu, T. Stewart, A.B. Cornfeld, J. Patton, J. Mirecki Millunchick, W. Hoke, C. Meaton, K. Nichols, S.P. Svensson, Quantum Epitaxial Designs, Inc.
6b	MOVPE Grown Metamorphic HEMT Epitaxial Wafers	Abstract
	T. Tanaka, T. Hashimoto, M. Washima, H. Sakaguchi. Hitachi Cable, Ltd.
6c	Material quality and uniformity issues of MOVPE-grown GaInP/GaAs HBTs	Abstract
	K. Kurpas, F. Brunner, M. Achouche, T. Spitzbart, E. Richter, T. Bergunde, D. Rentner, M. Mai, J. Wurfl, M. Weyers. Berdinand-Braun Institute
6d	WITHDRAWN
6e	Productive Availability of Non-destructive Thickness Measurement Techniques	Abstract
	Ryo Hattori and Tomoki Oku. Mitsubishi Electric Corp.
6f	New Barrel Type MOVPE Reactor for 6" Epitaxial Wafers	Abstract
	T. Osada, N. Fukuhara, T. Takada, M. Hata. Sumitomo Chemical Co., Ltd.
6g	Contactless Room Temperature Characterization of PHEMT Structures Using Surface Photovoltage Spectroscopy.	Abstract
	M. Leibovitch, I. Hallakoun, S. Solodky, N. Ashkenasy, G. Bunin, Y. Rosenwaks, Y. Shapira. ELTA Electronics Industries Ltd. and Tel-Aviv University
6h	Forecasting Methods for MMIC RF Yield	Abstract
	R. Tsai, M. Nishimoto, R. Lai. TRW, Inc.
6i	New On-Wafer Digital Laser Trimming Technique for Current Adjustment of GaAs FET	Abstract
	Y. Iwasaki, H. Furukawa, T. Tanaka, D. Ueda. Matsushita Electronics Corp.
6j	Assessing Circuit Hermeticity By Electrolysis	Abstract
	W. Roesch, S. Peterson, A. Poe, S. Brockett, S. Mahon, J. Bruckner. TriQuint Semiconductor, Inc.
6k	A Better Way to Predict Reliability from Lifetest Data Using a Regression Technique	Abstract
	J. Scarpulla, D. Eng, D. Leung. TRW Inc.
7a	Reliability of InGaP-Emitter HBTs	Abstract
	B. Yeats, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchingson, D. Kuhn, T. Low, T. Shirley, S. Thomas, W. Whiteley. Agilent Technologies
7b	Characterization of InGaP/GaAs HBTs under Temperature and Current Stress	Abstract
	T. Oka, K. Hirata, H. Takazawa, I. Ohbu. Hitachi,Ltd.
7c	Performance and Reliability of an Advanced Production GaAs HBT Process Technology	Abstract
	F.M. Yamada, A.K. Oki, D.C. Streit, B.L. Hikin, E.N. Kaneshiro, M.D. Lammert, L.T. Tran, T.R. Block, P.C. Grossman, J.R. Scarpulla, A.L. Guitierrez-Airken. TRW Inc.
7d	Base Current Investigation of the Long-Term Reliability of GaAs-Based HBTs	Abstract
	R.E. Welser, M. Chaplin, C.R. Lutz, N. Pan. Kopin Corporation
7e	Transient Characteristics of InGaP/GaAs/AIGaAs Double Heterojunction Bipolar Transistors	Abstract
	C.R. Lutz, R.E. Welser, N. Pan. Kopin Corporation
8a	Process Development on 0.1-mm Gat E/D MESFETs with fT and fmax> 100 GHz Using Direct Ion Implantation for Low Power IC Applications	Abstract
	Z. Tang, H. Hsia, D. Becher, D. Caruth, M. Feng
	Microelectronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801
8b	Cost Effective MeV Isolation Mask for Heterojunction Bipolar Transistors	Abstract
	J. Gillespie, C. Bozada, R. Dettmer, R. Fitch, K. Nakano, J.Sewell, D. Via Wright-Patterson, AFB
8c	Direct bonding of heterogeneous wafers using surface activated bonding method at room temperature	Abstract
	T. Watanabe, T.R. Chung, T. Suga. University of Tokyo
8d	Zero-Offset Low-Knee-Voltage GaInP/GaAs Collector-up Tunneling-Collector Heterojunction Bipolar Transistors for High-Efficiency High Power Amplifiers	Abstract
	K. Mochizuki, R.J. Welty, P.M. Asbeck. University of California, San Diego.
8e	Optimization of HIGFETs on LT-GaAs Buffer	Abstract
	J.K. Abrokwah, M. Sadaka, B. Bernhardt. Motorola, Inc.
8f	Utilization of Design of Experiments Combined with Technical Knowledge to Increase Manufacturability of HIGFET Device	Abstract
	Eugene Huang, Mark R. Wilson. Motorola, Inc.
8g	Highly accelerated stressing of GaAs bulk resistors	Abstract
	E. Sabin, J. Scarpulla, Y.C. Chou, C.S. Wu. TRW
8h	Device Characteristics of Dry Etch AlGaAs/InGaAs HEMTs Fabricated by Inductively Coupled Plasma Etching	Abstract
	J.H. Lee, H.W. Yoon, C.W. Lee, S.S. Choi, S.J. Maeng, K.H. Lee, A. Goodyear. Electronics and Telecommunications Research Institute.
9a	Transitioning Technological Innovation - A Market Perspective	Abstract
	Brian R. Smith. Booz Allen Hamilton, Inc.
9b	Commercial Wide Bandgap RF Power Devices - Fact or Fiction?	Abstract
	C. E. Weitzel. Motorola, Inc.
9c	GaN Electronic Devices for Microwave Power Applications	Abstract
	S.C. Binari, K. Ikossi-Anastasiou, J.A. Roussos, D. Park, D.D. Koleske, A.E. Wickenden, R.L. Henry. Naval Research Laboratory
9d	Business Opportunities for GaN Devices	Abstract
	Fred A. Blum. Nitres, Inc.
10a	Processing and Properties of PdGe Ohmic contacts to GaAs	Abstract
	A. MacInnes, R. Morton, F. Radulescu, J. McCarthy. Triquint Semiconductor
10b	Electron-beam Irradiation during Schottky Gate Metallization of GaAs FET	Abstract
	T. Ohshima, H. Ozawa, H. Moriguchi, R. Shigemasa, M. Tsunotani, T. Kumura. Oki Electric Industry
10c	A Manufacturable Multi-Level Interconnect Process Using Twp Layers of 4.5mm-Thick Plated Gold	Abstract
	J.W.L. Dilley and S.K. Hall. M/A-COM
11a	High Performance Metamorphic HEMTs on 100-mm GaAs Substrate	Abstract
	M. Kao, E.A. Beam III, M. Muir, P. Saunier, H. Tserng, W.R. Frensley. TriQuint Semiconductor
11b	High-Performance High-Gain Amplifiers Based on Metamorphic GaAs HEMT's	Abstract
	K. van der Zanden, D. Schreurs, R. Vandersmissen, G. Borghs. IMec
11c	Metamorphic InAlAs/InGaAs HEMT MMIC Technology on GaAs Substrate: From Promis to Reality	Abstract
	M. Chertouk, F. Benkhelifa, M. Dammann, M. Walther, K. Kohler, G. Weimann. Fraunhofer Institue for Applied Solid State Physics
11d	GaAs Metamorphic HEMT (MHEMT): The Ideal Candidate for High Performance, Millimeter Wave Low Noise and Power Applications	Abstract
	C.S. Whelan, P.F. Marsh, W.E. Hoke, T.E. Kazior. Raytheon RF Components
12a	Riding the Wireless Wave with 150mm GaAs Manufacturing	Abstract
	M.R. Wilson, K. Adams, E. Huang. Motorola, Inc.
12b	0.1 mm InGaAs/AlGaAs HEMT MMIC Production Process for High Performance Commeeridal Ka-band LNAs	Abstract
	R. Lai, P.H. Liu, J. Scarpulla, R. Tsai, D. Leung, D. Eng, R. Grundbacher, M. Aust, J. Lee, M. Hoppe. TRW Inc.
12c	Establishment of A Full Functional Six-inch PHEMT Manufacturing Wafer Fab	Abstract
	Y.C. Pao, D. Glajchen. Filtronic Solid State, Inc.