Optimization of Metal Adhesion for GaAs Backside Wafer Processing
Terry Daly, Jason Fender, Bob Duffin, Mike Kottke
Compound Semiconductor-1 Motorola, Inc.
2100 E. Elliot Rd. MD
Phone: 480-413-5029, email: firstname.lastname@example.org
Keywords: metal, adhesion, backside processing
Through use of analytical techniques and process monitors, we have studied metal adhesion to the wafer backside following through-substrate via processing. It was discovered that metal adhesion could be controlled by GaAs surface preparation with wet chemistry, RF pre-metal deposition sputter etch, and target crystallinity due to sputter power. Our results are based on Auger electron spectroscopy, optical reflectometry, atomic force microscopy, x-ray pole figures, and a test we developed to evaluate practical work of adhesion.