A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement
P. Chris Grossman, Kit Hayashibara, Quin Kan, Aaron Oki, Tom Block, Chuck Trucker, Randy Okamoto, Clay Cox, and Jeff Elliot
Northrop Grumman Space Technology,
Keywords: HBT, reliability, high current density
Space and other DoD systems require high reliability components, which will survive a long mission life. Heterojunction Bipolar Transistors (HBTs) are key components in these systems.
NGST has developed a robust system for long tern testing of HBT’s at very high current densities (200-300 kA/cm2). This test measures current enhanced degradation that may not appear with standard high temperature reliability screening methods. The system is fully automated providing high current stress, with periodic comprehensive in-situ testing of all devices.