Micro-Hall Devices: A Tool for Investigating Process Dependent Noise Sources in Planar III-V Heterostructure Devices
Vincent
Mosser and Alexandre Kerlain
Itron France, 50 Avenue Jean Jaures,
F-92120 Montrouge, France
Email: vincent.mosser@itron.com Phone: +33 (0) 146 00 6674
We promote here the use of
cross-shaped 4-terminal devices (Hall crosses) to measure LF noise spectra in
planar technologies. The implementation
of this method and its advantages over conventional methods are described. The method is then used to extract
information on the energetic as well as spatial location of a trap in
Metal-Insulator-Semiconductor P-HEMT hetero-structures. This method is also of special interest for
the characterization of devices based on less-mature materials such as
AlGaN/GaN or SiC, as it provides a robust, simple mean for performing noise
spectroscopy.
Keywords: GaAs, III-V, PHEMT, LF
noise, noise spectroscopy