Combined Infrared and Raman
temperature measurements on device structures
1) H.H.
Wills Physics Laboratory,
phone:
+44 117 3317739 e-mail: a.sarua@bristol.ac.uk
2) QinetiQ Ltd., St. Andrew’s
Road, Malvern,
Combined Infrared and micro-Raman techniques
were applied to measure temperature rise in semiconductor device structures
based on AlGaN/GaN HFETs. Results from both techiques were compared and
temperature and spatial resolution issues were discussed. Finite-difference 3D
modeling of temperature distributions was performed to aid the interpretation
of the experimental data. In
addition the versatility of the Raman method was demonstrated for a GaAs pHEMT
device.