The First 0.1mm 6” GaAs
PHEMT MMIC Process
L. Gunter, D.
Dugas, X. Yang, P. Seekell, M. Gerlach, J. Diaz, J. Lombardi, W. Hu, P.C. Chao,
K. Nichols, W. Kong, B. Golja, K.H.G. Duh and A. Swanson
BAE Systems
has developed the world’s first 0.1µm 6” 2-mil PHEMT MMIC process with high
power, high yield and excellent reliability.
Utilizing T-gate technology and 2-mil substrates, we have created a
millimeter wave technology producing excellent performance from Ka-band through
W-bands. DC and RF characteristics have
excellent uniformity across the wafer with very high spec yield. Due to the excellent reliability and
performance characteristics, the developed HPA technology provides a low cost
advantage for millimeter-wave applications.