InGaP-PlusÔ: A Low Cost Manufacturable GaAs BiFET
Process Technology
Mohsen Shokrani, Kezhou Xie,
Boris Gedzberg, Wojciech Krystek,
Prabhu Mushini, Aditya Gupta, Pat
Fowler, William Peatman
ANADIGICS, Inc.,
mshokrani@anadigics.com;
Keyword: BiFET, integration, InGaP, HBT, pHEMT, manufacturable
Abstract
InGaP-PlusÔ technology
(patent pending), a low cost manufacturable GaAs BiFET process has been
developed at ANADIGICS for high volume production of commercial MMICs. A
vertically integrated HBT and pHEMT epitaxial structure has been designed to
allow complete decoupling of HBT and pHEMT device structures. This enables independent optimization and
development of each device to achieve the required performance without any compromises. The process flow has been developed to
maximize the number of shared fabrication steps to minimize cost and maximize
yield. The extensive DC and RF characterization show that HBT and pHEMT devices
in the BiFET wafer have the same performance and reliability as the stand-alone
HBT and pHEMT devices. The process
control data for over one year of production demonstrate a stable InGaP-PlusÔ process with good process capability.