The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II
DHBT Model for 200 GHz Mixed Signal Circuit Simulation

Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino, William Snodgrass and Milton Feng
Department of Electrical and Computer Engineering, University of Illinois, Urbana IL 61801
Phone: (217) 333-4054, Email: mstuenk2@uiuc.edu
Keywords: Double Heterojunction Bipolar Transistor Type-II, Mixed Signal Circuits

Abstract
A large signal device model is developed for type-II InP/GaAsSb/InP devices that is based on the UIUC Type-I SDD model. The model accurately characterizes a balanced 480/420 GHz fT/fMAX device, and is used to design and simulate a 200 GHz static frequency divider.
                                                           14.3 PDF                                       Return to TOC