Process Development and Characteristics of Nano III-V MOSFET

Donald Cheng, Chichih Liao, K.Y. Cheng, Milton Feng
Department of Electrical and Computer Engineering, University of Illinois
Micro and Nanotechnology Laboratory 208 N. Wright Street Urbana, IL 61801
Phone: (217)244-3662, e-mail: dkcheng@uiuc.edu
Keywords: III-V MOSFETs, epitaxy, aluminum oxide
Abstract
The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high interface density of states between gate dielectric and channels by applying an interface-control-layer. The proposed design and results show promise for realizing compound semiconductor based MOSFETs
 
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