Materials Characterization and Device Performance Survey of InAlN/GaN
HEMT Layers from Commercial Sources

M. Trejo, G. H. Jessen, A. Crespo, J.K. Gillespie, D. Langley, D. Denninghoff, and G. D. Via
Sensors Directorate, Air Force Research Laboratory
Wright-Patterson Air Force Base, OH 45433
J. Carlin, D. Tomich, J. Grant, and H. Smith
Materials Directorate, Air Force Research Laboratory
Wright-Patterson Air Force Base, OH 45433
Keywords: HEMT, InAlN, wide bandgap, Ka-band

ABSTRACT
In this work, we compare the most recent efforts to develop device-quality InAlN/GaN HEMT structures from three commercial sources. These structures were grown by MOCVD on SiC substrates and all had the same nominal thickness and mole fraction. Device data from two- and fourfinger HEMTs will be presented for each material source. We will show the trends observed in the dc, small-signal, and load-pull data as a function of the material stoichiometry, and an estimate of the barrier layer bandgap
 
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