GaAs ManTech On-Line Digest Search

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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

1996 On-line Digest Table of Contents

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SESSION I: HBT
Chair: Milton Feng, University of Illinois

1.1

Removal of Hydrogen from the Base of Carbon-doped HBTs by Ex-situ Rapid Thermal Annealing
QJ. Hartmann, M.T. Fresina, D.A. Ahmari, H. Hwangbo, A. Yung, J.E. Baker, and G. E. Stillman

University of Illinois, Microelectronics Laboratory

1.2

Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors with Two-step SiNx or InyGaP Passivation Layers
S. Ahmad Tabatabaei, F.G. Johnson, D.R. Stone
Joint Program for Advanced Electronic Materials,
Electrical Engineering Department, and Laboratory for Physical Sciences,

University of Maryland

1.3

Manufacturable Fabrication Process for Self-Aligned, Thin-Base InGaP/GaAs HBTs
M.T. Fresina, D.A. Ahmari, Q.J. Hartmann, D.W. Barlage, M.S. Hines, A. Yung, M. Feng and G. E. Stillman

University of Illinois, Microelectronics Laboratory

1.4

InP/InGaAs HBYs with 1.5 V-Single Bias Voltage for L-Band Power Applications
H. Shigematsu, T. Iwai, H. Yamada, and K. Joshin

Fujitsu Laboratories Ltd.

1.5

The Process Design and Fabrication of Monolithic OEIC Lightwave transmitter with 1.55 um MQW Laser and HBT Driver Circuit
Dong Yi, Li Yudong, Zeng Qingming, Cai Keli, Liang Chunguang and Liu Shiyong

Hebei Semiconductor Research Institute, Electronic Science & Technology Research Institute of Jilin University

SESSION II: PROCESS I
Chair: Paul Becker, Lockheed Martin

2.1

Recess Etching Technique Comparisons for MESFET, HFET, PHEMT and HBT Technologies
Keith A. Salzman

Texas Instruments, Inc.

2.2

Controlled Digital Etching of GaAs for Precise Gate Recess Formation in MESFET, HEMT, and pHEMT Device Fabrication
G. DeSalvo, J. Ebel, C. Bozada, J. Barrette, C. Cerny, R. Dettmer, J. Gillespie, C. Havasy, T. Jenkins, K. Nakano, C. Pettiford, T. Quach, J. Sewell, and D. Via
Electron Devices Division, Avionics Directorate, Wright Laboratory, Wright-Patterson Air Force Base

2.3

Automated Hot Plate Alloy for MMIC Manufacturability
E. Stonebraker and M. Durschlag
Raytheon Co, Lam Research, VLSI Technology Inc.

2.4

Improved Ohmic Contacts to PHEMTs Using Germanium Rich Metal Stacks
M. Durschlag

Raytheon Co., Advanced Device Center

SESSION III: DESIGN FOR MANUFACTURABILITY

Chair: Art Geissberger, Alpha Industries

3.1.

Electrostatic Discharge Protection for GaAs Devices and MMIC Circuits
Abbas AmiriChimeh, M.D., Dr. David P. Klemer, Dr. Ronald L. Carter, Dr. Burt Marks, The University of Texas at Arlington, Texas Instruments, Inc.

3.2

Design and Fabrication of Coplanar Ka-Band Monolithic Integrated Circuits
J.R. Middleton, D.S. Chen, C.C. Teng, J. Kruse, D. Scherrer, R. Shimon, D. Barlage, M. Heins, and M. Feng
University of Illinois at Urbana-Champaign

3.3

GaAs MMIC Chip Compaction of Broad Band X-Band High Power Amplifiers
R. Wang, A. Kurdoghlian, M. Cole, T. Chi, C. Chang, Z. Bardai, T. Midford
Hughes Aircraft Company

3.4 

Correlation of Small Signal Performance of Ion-Implanted Devices to fundamental Physical Variables using 2-D Numerical Simulation
Marcus A. King, John Beall, Sam Pritchett, Kerri Whelan Daren Bridges and Christian Yots
Texas Instruments, Inc.

SESSION IV: MANUFACTURING
Chair: Steve Evans, Texas Instrument / Bruce Bernhardt, Motorola

4.1

High Volume Testing of RF & Analog GaAs Integrated Circuits
Phillip W. Wallace, Mark A. Bonelli Farzin Fallah, David S. Faye Sergei Kent, Art A. McComas, Joseph J. Mickey, Dave F. Miller, Rick C. Salvador, Robert W. Schrock, Anadigics, Inc.

4.2

Enhanced Manufacturability of GaAs Ion Implanted MESFET Technology for Monolithic Microwave Integrated Circuits
M.R. Wilson, R. Balda, C. Della, J. Gilbert, E. Huang, and L.S. Klingbeil
Motorola Semiconductor Products Sector

4.3

Low Cost X-Band Monolithic Integrated LNA Using Direct Ion Implanted GaAs MESFETs
A. Kurdoghlian, T. Chi, C Chang, Z Bardai, D. Tonomura, C. Pao, T. Midford, D. Li, M. Cole, T. Bguyen
Hughes Aircraft Company

4.4

Yield Enhancement for Commercial PHEMT Devices and MMICs
T. Kao, C. Hua, F. Oshita, J. McCulloch, A. Lee, Y. Chung and D. Day
Hewlett-Packard, CMCD Division

4.5

GaAs Fabrication Simulation Modeling
Chester L. Brewer, H. George Henry, and Andre K. Rush
Westinghouse ESG

SESSION V: RELIABILITY
Chair: Ki-Woong Chung, LG Electronics

5.1

High Temperature Accelerated Life Test of >1GHz Digital GaAs Logic
Brant Besser
Motorola Government and Space Technology Group

5.2

Class B Accelerated Life  Testing of GaAs FETs
R. Khanna, A. Geissberg, .A. Tkachenko, J. Jorgenson, S.G. Munro, D. Bartle, D. Whitefield
Alpha Industries

5.3

Hydrogen Effects on GaAs Device Reliability
Sammy Kayali
Jet Propulsion Laboratory California Institute of Technology

5.4

NiGeW Ohmic Contracts on GaAs Heterostructure Field Effect Transistors
J.H. Huang, S. Tehrani, M. Durlam, M.J. Martinez, E. Schirmann, N. Cody
Motorola, Inc.

SESSION VI: GaAs OVERVIEW
Chair: Jim Hutchby, Research Triangle Institute

6.1

EuroGaAs – The European GaAs Industry
Dr. I.G. Eddisson and J.A. Turner
Department of Trade and Industry, London, Consultant to GEC – Marconi Materials Technology Ltd.

6.2

GaAs MESFET Manufacturing Technologies in Japan
Dr. Hiroshi Nakamura
Oki Electric Industry Co., Ltd.

6.3

The GaAs Industry in North America
D. Gary Lerude
Texas Instruments

SESSION VII: INTERACTIVE FORUM
Chairs: Daniel Rosenblatt, Samsung Microwave

7.1

Statistical Database & Electronic Data Management for GaAs Products
Moshe Gat, Charles Baughman, Vince Du, Wesley Fields, Jeff Raggio, Andreas Tsafos

Hewlett-Packard

7.2

A New Approach to Substrate Temperature Measurement in MOCVD Rotating Disk Reactors
A.I. Gurary, R.A. Stall, W.J. Kroll, A.G. Thompson, and N.E. Schumaker

EMCORE Corporation

7.3

Advanced GaAs and InP base Epi-wafers for Volume Production

T.T. Childs, T. Nohava, S. Mukherjee, V. Sokolov and C. Sullivan

7.4

FSF’s Solid Phase Epitaxy Cost Effective Revolutionary GaAs Processing and Manufacturing Technology
Dr. F. Sepehry-Fard

F.S.F. Research Technologies, Inc.

7.5

Electronic Access of Graphical Data Packages for a Wafer Fabrication Facility
John Day

Raytheon Company

7.6

Efficiency, Throughput and Yield consideration for GaAs Epitaxy equipment

F. Schulte M. Deschler, G. Strauch, H. Jurgensen

7.7

Characterization of the Backgating Effect at Microwave Frequency
C.C. Temg, D.S. Chen, D. Scherrer, D. Barlage, M. Feng

University of Illinois at Urbana-Champaign

7.8

The Relocation of Two Riber Production MBE Systems
W.E. Quinn, T.W. Rondina and S.T. Mulligan

Raytheon Company

7.9

A Complete 3 Volt Transceiver for PCS Applications
C. McCarroll, D. Boire, J. Sanctuary, M. Blum, J. Coronella, M. Casseres, S. Mass

Sanders, a Lockheed Martin Company

7.10

Low-Power, Wideband, High-Speed, Linear, AlGaAs/GaAs HBT Monolithic Successive Detection Logarithmic Amplified (SDLA)
G. Kuehner, P. Enquist, T. Markas

AEL Industries, Inc.

7.11

High Resolution X-Ray Diffraction Characterization of Pseudomorphic HEMT Epitaxial Structures
K. Bacher, D. Hartzell, T. Hierl, D.C. Martel, S. Massie, R.S. Rai

Quantun Epitaxial Designs

7.12

In Situ Growth Rate and Temperature Measurement in Molecular Beam Epitaxy Using Pyrometric Interferometry and Diffused Reflectance Spectroscopy
P. Thompson, J. Zhou, L. Flanders, and H.P. Lee

University of California, Irvine

7.13

A Test Structure for Targeting the MBE Growth of AlGaAs/InGaAs/GaAs Pseudomorphic Transistors
Forrest Kellert, James Chang, George Patterson

Hewlett-Packard Company

SESSION VIII: PROCESS II
Chair: Ding Day, Hewlett-Packard

8.1

0.2 Micron Gate Lithography Using Optical Stepper and PSM Technologies
Lawrence G. Studebaker
Hewlett-Packard Company

8.2

DOE Optimization of A Three-Resist 0.25um T-Gate Process
K.M. Renaldo, H.G. Henry, H.C. Cramer, K.D. Larson
Westinghouse Electric Corp.

8.3

An Angle-Evaporation Technique for Fabricating 0.2 um Gamma-Gates for Metal-Semiconductor Field-Effect Transistors
C.Y. Lee W.R. Hitchens, W.A. Strifler, R.D. Remba
Watkins-Johnson Company

8.4

InP-Based Mixed Signal/Mixed Device Technology
W.E. Stanchina, J.J. Brown, M. Hafizi, R.H. Walden, H.C. Sun, M. Rodwell
Hughes Research Laboratories, University of California at Santa Barbara

SESSION IX: THERMAL MANAGEMENT
Chairs: Dominique Pons Thomson-CSF

9.1

Thermal Management in GaAs Devices and Components
R.L. Hale
Raytheon Company

9.2

Thermal Management of High Power HBTs
Burhan Bayraktaroglu
Westinghouse Electric Corporation

9.3

A High-Yield Emitter Process for Realizing Self-Aligned Base, Thermally-Shunted HBTs
J. Sewell, J. Barrette, C. Bozada, R. Dettmer, T. Jenkins, M. Mack, R. Anholt, G. DeSalvo, J. Eb el, J. Gillespie, C. Havasy, C. Ito, L. Liou, K. Nakano, C. Pettiford, T. Quach, G. Via
United States Air Force Wright Laboratory, Gateway Modeling

SESSION X: MATERIALS
Chair: Kenneth Elliott, Hughes Research Lab

10.1

Fabrication of double planar doped Pseudomorphic HEMT devices from MOCVD grown material
C. Beckham, R.A. Stall, A.G. Thompson, L. Aina, K. Seipel
EMCORE Corporation, M/A-COM Inc.

10.2

Throughput and Yield improvement of MOCVD materials growth in high volume GaAs/Ge based space solar cell production.
Michael H.T. Yang, Charlie Huang, Scott Khemthong, Gloria Jara Frank Ho
Applied Solar Energy Corporation

10.3

Method for Characterization of III-V Epitaxial Structures Incorporating an Etch Stop Layer
Daniel M. Dobkin, Ronald D. Remba, William R. Hitchens, Carol Y. Lee, Camie S. Dalmacio, Scott Snider,
Enigmatics, Watkins-Johnson Company

10.4

Vertical Gradient Freeze GaAs for Ion-Implantation Applications
M.J. Brophy, X. Liu, T. Young, H.I. Helava M. Houng, B. Lauterwaser, C. Jacobs
TriQuint Semiconductor, American Xtal Technology, Raytheon Company

SESSION XI: PROCESS III
Chairs: Maria Ristow, Watkins-Johnson

11.1

GaAs pHEMT Device Passivation Technology for High Efficiency Power Amplifier Applications
J.J. Brown, A.E. Schmitz, M. Hu, J.A. Pusl, J.B. Shealy, D.P. Docter, M.A. Thompson, L.D. Nguyen, C. Constantine
Hughes Research Laboratories, Hughes Space and Communications Company, PlasamaTherm Inc.

11.2

The Effect of 02 Plasma to Activation of Si Implants in GaAs
Yoshihiro Saito Shigeru Nakajima, Takeshi Fukuzawa, Hideaki Nishizawa
Sumitomo Electric Industries, Ltd.

11.3

Manufacturing Concerns of Reactively Sputtered Aluminum Nitride
L.S. Klingbeil, M.R. Wilson
Motorola Semiconductor Products Sector

11.4

Fabrication and Characterization of Polyimide Multilayer Structures for MMIC Applications
Q.H. Wang, T. Gokdemir, D. Budimir, U. Karacaoglu, A.A. Rezazadeh, I.D. Robertson
Kings College, University of London, The Strand