P A P E R    T I T L E
Very high Performance and Reliable 60GHz GaAs PHEMT MMIC Technology

A U T H O R  /  C R E D I T S
P.C. Chao, W. Hu, J. Liu, W. Hoffmann*, and A.W. Swanson
Sanders, Lockheed Martin Co., Nashua, NH 03061
* CPC, Lockheed Martin Co., Philadelphia, PA 01111
pane.chao@lmco.com, (603)885-1057

A B S T R A C T
A successful development of a very high performance and reliable 0.1µm power PHEMT MMIC technology is reported. An output power as high as 550mW (0.46W/mm) with 23.5% power added efficiency has been demonstrated and a mean-time-to-failure (MTTF) of 1x107hours at a channel temperature of 120°C has also been projected from the MMIC at 60GHz. The developed solid-state power amplifier (SSPA) technology, for the first time, supports the crosslink applications at V-band - the area dominated by TWTAs at all power levels except at a few watts and below where IMPATT diodes have been used.