The University of Michigan, Department of Electrical Engineering and Computer Science
1301 Beal Ave., Ann Arbor, MI 48109-2122
E-mail: email@example.com, URL: www.eecs.umich.edu/dp-group
A B S T R A C T
The properties of HBTs, HEMTs, PHEMTs and MESFETs are reviewed and discussed in the context of their suitability for various applications. Noise, power and high frequency performance is reviewed and the physical mechanisms dictating their values are discussed. The reliability characteristics of the devices are discussed and system applications are reported.