P A P E R    T I T L E
Heterostructure Device Wafer Manufacturing for Telecom Applications for 4" and 6" Wafer Fabs

A U T H O R  /  C R E D I T S
John C.C. Fan
Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780
jfan@kopin.com (508-824-6696)

A B S T R A C T
Epitaxial device wafers are becoming increasingly important for microwave, wireless and telecom circuits. Currently, 4" wafers can be controllably produced in volume, and there is a movement towards 6" wafers. The primary motivation to migrate towards 6" fabrication is the cost advantages which can increase market penetration of GaAs based circuits. Successful manufacturing of 6" epitaxial wafers critically depends upon the availability of high quality substrates and epitaxial growth technology to produce thin, highly uniform layers over large areas. In addition, vigorous statistical process control of the epitaxial growth process is essential for high volume manufacturing of heterostructure devices. Preliminary results indicating good heterostructure layer characteristics demonstrate the feasibility of 6"AlGaAs-based HBT device wafers. Specific features of the HBT structure and manufacturing process may facilitate this technology's transition to 6" wafers.