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The International Conference on
Compound Semiconductor Manufacturing Technology

"Sharing Ideas Throughout the Industry"

1999 On-line Digest Table of Contents

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3
Comparison of Metamorphic InGaAs/InAlAs HEMT's on GaAs with InP based LM HEMT's 
6
Process Monitoring for Nitride Dielectric Defect Density 
8
Optimized Planning and Operation of High Volume GaAs Epi-Wafer Manufacturing Facility 
11
InP HBT Production Technology for 100 Gbps Lightwave Communications 
12
The Reactive Ion Etching of Au on GaAs Substrates in a High Density Plasma Etch Reactor 
13
Wax Mounting, Backlapping and Chemo-Mechanical Polishing of 150mm (6 Inch) GaAs Wafers. 
15
Alternate Backside Thinning of GaAs-Based Devices 
16
0.1 µm InGaAs/InAlAs/InP HEMT Production Process for High Performance and High Volume MMW Applications 
17
In0.5Ga0.5P Etch-Stop Process for PHEMT Manufacturing 
18
Accelerated Lifetests for High-Speed 0.5-µm InGaAs PHEMT Switches 
19
Characterizing Fabrication Process Induced Effects in Deep Submicron PHEMT's Using Spectrally Resolved Light Emission Imaging 
22
A Two Step Polyimide Etchback for Integration of Heterojunction Bipolar Transistors and Resonant Tunneling Diodes 
25
Suppression of Anomalous Electrochemical Etching by Reducing Dissolved Oxygen in Deionized Water for HEMT Process 
26
Electrochemical Etching in the Fabrication of Short Gate-Length InAlAs/InGaAs Heterojunction FETs 
27
Hydrogen-related Issues in GaAs Schottky Contacts 
28
Material and Processing Technology for Manufacturing of High Speed, High Reliability GaInP/GaAs HBT based IC's 
29
Effects of Selective Gate Recess Etching on the Static and Microwave Properties of InGaP/InGaAs PHEMTs 
31
MBE Production of HEMT Material for Commercial Applications 
32
economic Justification of a 6" GaAs Wafer Fab 
33
Process Simulation and Fabrication of Power Heterojunction Bipolar Transistors 
37
Manufacturable In0.8Ga0.2P/In0.53Ga0.47As/InP Doped-channel HFETs with fT and fmax over 170 GHz 
40
Very high Performance and Reliable 60GHz GaAs PHEMT MMIC Technology 
41
The Effects of Feedback Capacitance on Thermally Shunted Heterojunction Bipolar Transistor's Linearity 
42
HBT vs. PHEMT vs. MESFET: What's best and why 
44
A Product Engineering Exercise in 6-Sigma Manufacturability: Redesign of a PHEMT Wide-Band LNA 
45
Testing Radiation damage in III-V Transistors 
46
Heterostructure Device Wafer Manufacturing for Telecom Applications for 4" and 6" Wafer Fabs 
47
Effects of Ballast Resistors on Power and ESD Performance in AlGaAs/GaAs Heterojunction Bipolar Transistors 
48
The Future Potential 
51
An Efficient On-Wafer Production Test System for MMW Power MMICs with Diagnostic Flag Capability 
53
Packaging of Ultra-Thin Film GaAs Devices for Increased Thermal Efficiency and High Density MCM's 
54
Solution to the E-beam Gate Resist Blistering Problem of 0.15 micron PHEMTs 
55
Dry Etching Process in InP Gunn Device Technology Utilizing Inductively Coupled Plasma (ICP) 
56
Key Considerations and New Advances in High Volume Production for Millimeter-wave MMICs 
57
Transfer and Qualification of a Layout-Compatible Second Source HBT Technology for Mobile Phone Applications 
58
Model Development for Image Reversal Resist Lithography 
59
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies 
60
The Siemens 150mm GaAs Production Facility 
61
Deflection Mapping is Useful for its Ability to Identify Distortion-prone GaAs Wafers 
63
Gate Metallization Study for InGaP/InGaAs/GaAs pHEMTs 
64
Practical Approaches to Remediation of Hydrogen Poisoning in GaAs Devices 
65
Characterization and Control of Epitaxial Material for HBT Manufacturing 
66
Properties of 6-inch Semi-insulating GaAs Substrates Manufactured by Vertical Boat Method 
67
A Study on PtGeAu Thin Ohmic Contact for GaAs PHEMT 
71
Progress in SiC Materials and Microwave Devices 
72
Status and Application of Advanced Semiconductor Technologies 
73
Improved Manufacturability Methods for a High Volume, PHEMT Based, Ku-Band Power Module for VSAT Applications. 
74
A GaAs Fab's Approach to Design for Manufacturability 
75
Manufacturable AlGaAs/GaAs HBT Implant Isolation Process Using Doubly Charged Helium 
76
GaAs Heterojunction Bipolar Transistor Emitter Design 
77
A Design of Experiments Approach to BCB Etch Uniformity Improvements 
78
Preparing Polished Cross Sections Of III-V Devices For The SEM