Commercial Wide Badgap Rf Power Devices - Fact or Fiction?

C. E. Weitzel
III-V Device Development - DigitalDNATM Labs
Semiconductor Products Sector
Motorola, Inc., 2100 E. Elliot Rd., Tempe, AZ  85284

Wide bandgap RF power devices, SiC SIT's, SIC MESFET'S and AlGaN/GaN HFET's are described and their performance is compared with that of Si LDMOS FET's and GaAs FET's.  The prospects for commercialization are discussed in light of the available market and technical challenges.

 

 

09b.pdf 

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