Reversible and Permanent Wafer Bonding for GaAs Processing

T. Glinsner1, T. Luxbacher1, P. Lindner1, C. Schaefer1, R. Michaels2, J. Palensky2, V. Dragoi3 and M. Reiche3

1 EV Group
2 EV Group US, Inc.
3 Max Planck Institute of Microstructure Physics
 
Wafer bonding for Compound Semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry and supports successfully new ways of processing thin and large diameter GaAs wafers. GaAs wafers temporarily and reversibly bonded to a carrier substrate are suited for reliable back thinning and backside lithography. Permanent wafer bonding allows the production of Si/GaAs wafer heterostructures for the integration of optoelectronic devices into Si integrated circuit (IC) technology.

This paper will describe two state-of-the art methods and corresponding results of wafer bonding for manufacturing thin and therefore fragile GaAs wafers: (a) Aligned reversible wafer bonding to a rigid carrier substrate by wax for optimum handling during production; (b) Permanent bonding to a Si wafer via an epoxy or glass-like interlayer.

Reversible and Permanent Wafer Bonding for GaAs Processing

 

A U T H O R  /  C R E D I T S
T. Glinsner1, T. Luxbacher1, P. Lindner1, C. Schaefer1, R. Michaels2, J. Palensky2, V. Dragoi3 and M. Reiche3

1 EV Group
2 EV Group US, Inc.
3 Max Planck Institute of Microstructure Physics
 
 
Wafer bonding for Compound Semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry and supports successfully new ways of processing thin and large diameter GaAs wafers. GaAs wafers temporarily and reversibly bonded to a carrier substrate are suited for reliable back thinning and backside lithography. Permanent wafer bonding allows the production of Si/GaAs wafer heterostructures for the integration of optoelectronic devices into Si integrated circuit (IC) technology.

This paper will describe two state-of-the art methods and corresponding results of wafer bonding for manufacturing thin and therefore fragile GaAs wafers: (a) Aligned reversible wafer bonding to a rigid carrier substrate by wax for optimum handling during production; (b) Permanent bonding to a Si wafer via an epoxy or glass-like interlayer.