Biased, Backside Failure Analysis Techniques for Small Plastic Packages
 
Steve Brockett and Ting Xiong
TriQuint Semiconductor, Inc.
 
We will present three techniques for analysis of GaAs RFICs in SOT-23 packages. The first is simple acid decapsulation from the die-side of the device. Next, we will show two methods to analyze these devices from the backside. One technique utilizes the light-transmission properties of GaAs to "look" through the substrate and the other utilizes a GaAs etch to completely remove the substrate and expose the device metals.