Development Of Broadband Low-Voltage RF MEM Switches

S.C. Shen, D. T. Becher, D. C. Caruth, and M. Feng
Center for Compound Semiconductor Materials and
Dept. of Electrical and Computer Engineering,
University of Illinois at Urbana-Champaign

We present novel RF switches using micro-electro-mechanical (MEM) technology. These MEM switches are built on GaAs substrates using GaAs MESFET MMIC-compatible processes. The fabricated shunt switches showed an insertion loss of less than 0.2dB and an isolation of greater than 20dB up to 40GHz. The switching speed is 47µS. The broadband MEM switches are promising building blocks for wideband circuits and re-configurable antenna applications.