Nondestructive Characterization of Epitaxial Structure for High Electron Mobility Transistors

 

Mikhail K. Mikhov 1 , Eric S. Johnson 1 , Celicia Della 1 , Brian J. Skromme 3 , Ellen Lan 2 , Mark Rittgers 1 ,

Mike Pelczynski 1

1 Motorola Inc., SPS, CS1, 2100 E.Elliot Road, MD EL720, Tempe, AZ 85284; 2 Motorola Inc., SPS,DDL, 2100 E.Elliot Road, MD

EL720, Tempe, AZ 85284 ; 3 Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287-5706

Tel: (480) 413-3733, FAX: (480) 413-4453, Email: R37756@email.sps.mot.com

 

Abstract

 

A nondestructive technique for screening of pHEMT epi in order to comply with electrical specification criteria is discussed. The 300K PL spectra deconvolution and the spectra differences were used to track the sheet charge Ns in the InGaAs channel. The PR aproach to AlGaAs Schottky layer composition and charge is applied for production wafer screening. The correlation with PCM device results was used to create a pass/fail filter for pHEMT epi.

 

              

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