Investigation of stressing InP/InGaAs DHBTs under high current density

V.E. Houtsma, J. Frackoviak, R.F. Kopf, R.R. Reyes, W. Sung, A. Tate,

Y. Yang, N.G. Weimann, and Y.K. Chen

Bell Labs, Lucent Technologies, 600 Mountain Ave, Murray Hill, NJ 07974

Tel : (908) 582-6779, email: vhoutsma@lucent.com

 

Keywords : InP DHBT, high current density, degradation, reliability, life test

 

Abstract

We report on an InP/InGaAs DHBT technology, allowing high-speed operation with Ft=150 GHz, Fmax =200 GHz at current densities of Jc=110 kA/cm 2 , while maintaining BVceo >12 V. Moreover, excellent device uniformity and reliability is demonstrated under high current density stress with Time-to-Failure (TTF) > 45 years at Tjunc=110 o C with .( / o) < 20% making this technology suitable for high-speed IC fabrication.

 

 

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