Investigation of stressing InP/InGaAs DHBTs under high current density
V.E. Houtsma, J. Frackoviak, R.F. Kopf, R.R. Reyes, W. Sung, A. Tate,
Y. Yang, N.G. Weimann, and Y.K. Chen
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Keywords : InP DHBT, high current density, degradation, reliability, life test
We report on an InP/InGaAs DHBT technology, allowing high-speed operation with Ft=150 GHz, Fmax =200 GHz at current densities of Jc=110 kA/cm 2 , while maintaining BVceo >12 V. Moreover, excellent device uniformity and reliability is demonstrated under high current density stress with Time-to-Failure (TTF) > 45 years at Tjunc=110 o C with .(â /â o) < 20% making this technology suitable for high-speed IC fabrication.