GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance

Bryan D. Dickerson, Bradley J. Heath, and Louis J. Guido

Virginia Tech, Department of Material Science and Engineering, 213 Holden Hall, Blacksburg, VA 24061

Email: louis.guido@vt.edu; Tel: 540-231-3551; Fax: 540-231-8919

Kevin S. Stevens, Charles R. Lutz, Eric M. Rehder, and Roger E. Welser

Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780

 

Abstract

Data presented herein demonstrate that the DC current gain of GaInP/GaInAsN/GaAs DHBTs is almost independent of temperature over the range 225 [T [475 K and is relatively insensitive to current density for Jc /1 A/cm 2 . Direct comparisons are made between DHBTs with different GaInAsN base alloy compositions and grading schemes and a high-performance GaInP/GaAs HBT.

 

 

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