GaInP/GaInAsN/GaAs N-p-N Bipolar Transistors: Influence of Base Layer Composition and Alloy Grading on Device Performance
Bryan D. Dickerson, Bradley J. Heath, and Louis J. Guido
Virginia Tech, Department
of Material Science and Engineering, 213 Holden Hall,
Email: firstname.lastname@example.org; Tel: 540-231-3551; Fax: 540-231-8919
Kevin S. Stevens, Charles R. Lutz, Eric M. Rehder, and Roger E. Welser
Data presented herein demonstrate that the DC current gain of GaInP/GaInAsN/GaAs DHBTs is almost independent of temperature over the range 225 [T [475 K and is relatively insensitive to current density for Jc /1 A/cm 2 . Direct comparisons are made between DHBTs with different GaInAsN base alloy compositions and grading schemes and a high-performance GaInP/GaAs HBT.