Characteristics of Low-k Film Deposited by Plasma-Enhanced CVD Using a Liquid BCB Source
Suehiro Sugitani, Hideaki Matsuzaki, and Takatomo Enoki
NTT Photonics Laboratories, NTT Corporation
Wakamiya, Atsugi-shi, Kanagawa, 243-0198
E-mail: firstname.lastname@example.org, Tel: +81-46-240-2312
Keywords: BCB, CVD, interlayer film, low dielectric constant, interconnect
Characteristics of organic film deposited by plasma-enhanced CVD at low temperature below 250 °C using a liquid source of BCB were investigated and compared with standard spin-coated BCB. Uniform thin organic film was successfully deposited on 3-inch wafer with thickness uniformity of 3%. Dielectric constant, breakdown voltage, and moisture absorption of the film deposited by CVD are similar to spin-coated BCB. It was found from FT-IR measurement, however, that the film deposited by CVD has fewer Si atoms than spin-coated BCB and therefore it can be etched by RIE using only O2 gas. The step-coverage of the film deposited by CVD is conformal and considered advantageous for ultra-fine structures.