Characteristics of Low-k Film Deposited by Plasma-Enhanced CVD Using a Liquid BCB Source

Suehiro Sugitani, Hideaki Matsuzaki, and Takatomo Enoki

NTT Photonics Laboratories, NTT Corporation

3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198 Japan

E-mail: sugitani@aecl.ntt.co.jp, Tel: +81-46-240-2312

 

Keywords: BCB, CVD, interlayer film, low dielectric constant, interconnect

 

Abstract

Characteristics of organic film deposited by plasma-enhanced CVD at low temperature below 250 C using a liquid source of BCB were investigated and compared with standard spin-coated BCB. Uniform thin organic film was successfully deposited on 3-inch wafer with thickness uniformity of 3%. Dielectric constant, breakdown voltage, and moisture absorption of the film deposited by CVD are similar to spin-coated BCB. It was found from FT-IR measurement, however, that the film deposited by CVD has fewer Si atoms than spin-coated BCB and therefore it can be etched by RIE using only O2 gas. The step-coverage of the film deposited by CVD is conformal and considered advantageous for ultra-fine structures.

 

 

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