Development of High-Gain and High-Efficiency InGaP/GaAs HBT for High-Voltage Operation

Yuefei Yang, Kevin Feng, Byounguk In, Chanh Nguyen, Daniel Hou, Yaochung Chen and Dave Wang

Global Communication Semiconductors, Inc.

22315 Kashiwa Court, Torrance, CA 90505

Phone: (310) 530 7274, Fax; (310) 530 7279, Email: yyang@gcsincorp.com

 

Key words: InGaP/GaAs HBTs, High Breakdown voltage.

 

Abstract

A high-gain and high-efficiency InGaP/GaAs HBT for high voltage operation has been developed. Saturated Pout of > 33dBm, peak PAE of > 70% and linear gain of > 22dB have been obtained for a 2 watt device at 0.9GHz and 2GHz. The device shows high burnout voltage at 10V operation and very high reliability for infrastructure applications.

 

 

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