An InP/InGaAs SHBT Technology for High-Speed Monolithic Optical Receivers
Shyh-Chiang Shen, David C. Caruth, Doris Chan, Aunt Thu, Jeffrey Feng, and Milton Feng
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Keywords: InP, Single Heterojunction Bipolar Transistor, Optical Receiver
In this paper we present a manufacturable InP/InGaAs SHBT technology suitable for monolithic integration of high-data- rate optical receivers. We investigated the fabricated SHBT and found that they are essentially insensitive to processing variations. The satisfactory device yield and uniform device performance in a research laboratory environment suggested the robustness of InP-based SHBT technology. Our device and circuit results augment the feasibility of InP HBT for both optoelectronic and microelectronic applications.