Improved characterization of diffusion in ohmic contacts using Backside SIMS

Patrick Van Lierde, Chunsheng Tian

Charles Evans & Associates, 810 Kifer Road, Sunnyvale CA 94588, USA,

Email: pvanlier@cea.com; Phone: 1-408-530-3812

 

Keywords:   Backside SIMS, ohmic diffusion, laser diode

 

Abstract

Secondary Ion Mass Spectrometry (SIMS) is a proven analytical tool for materials characterization. Backside SIMS was used successfully to study the diffusion of a Au/Pt/Ti metal stack on a laser diode as well as to identify unintentional p-type doping. We will illustrate the excellent control of polishing depth with minimal surface roughness and excellent planar control.

 

 

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