A New Materials Base for Future Ultra High Power RF Elecgronics
E. Kohn, A. Aleksov, M. Kubovic, P. Schmid, J. Kusterer, M. Schreck*, M. Kasuo
Of Electron Devices and Caircuits,
e-mail: firstname.lastname@example.org, phone +49 731 50 26151
Of Experimental Physics,
Basic Research Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi
Keywords: diamond semiconductor, high power / high temperature application
Diamond is an ideal semiconductor material for high power / high temperature electronic systems with active device structures and MEMS components. Despite the difficult materials and device technology, individual transistor structures and passive components have been realized, allowing to extract first encouraging microwave performance data. A critical issue is still the availability of single crystal substrates. The state of the art of both groups of devices (active and passive) is reviewed together with the materials requirements for ultra high power RF applications.