Manufacturable A1Sb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits

R. Tsai1, R. Gundbacher1, M. Lange1, J.B. Boos2, B.R. Bennett2, P. Nam11, L.J. Lee1, M. Barsky1, C. Namba1, K. Padmanabhan1, S. Sarkozy1, P.H. Liu1, and A. Gutierrez1

1Northrop Grumman Space Technology, Inc., Redondo Beach, CA  90278

Tel: (310) 812-8254, Fax: (310) 813-0418, Email: roger.tsai@ngc.com

 

2Naval Research Laboratory, Washington, DC 20375-5320, USA

 

Abstract

High electron mobility transistors with InAs channels and sub 0. 1 mm metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs.  AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining fT and fmax results greater than 220 GHz and 270 GHz, respectively.  In this paper, we will discuss our efforts to develop this technology for revolutionary low-power, high frequency MMIC applications.

 

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