1/f Noise Characteristics and High-Frequency Noise Performance of InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs PHEMTs

Chung-Er Huang, Huan-Chun Yen

Chien-Ping Lee1, Mau-Chung Frank Chang2

Global Communication Technology Corp., 4F, No. 10, Prosperity 1st Rd. Hsinchu 300, Taiwan, R.O.C.

1Department of Electronics Engineering, National Chiao Tung University, 1001 TaHsueh Road, Hsinchu, Taiwan

2Department of Electrical Engineering, University of California Los Angeles, Los Angeles, CA  90095-1594 U.S.A.

Phone: 886-35638686 #7601

Fax: 886-35638432

Email: cehuang@gct.com.tw, hcyen@gct.com.tw

 

Keywords : InGaP, PHEMT, 1/f Noise

 

Abstract

We have previously compared the DC and RF performance between of InGaP/InGaAs/AlGaAs and InGaP/InGaAs/GaAs PHEMTs [1].  In this paper, we will report the study of their respective noise characteristics.  The InGaP gate barrier has the advantages of providing an adequate carrier confinement for the channel carriers while eliminating the common problems associated with the AlGaAs barrier.  Between the two structures the InGaP/InGaAs/AlGaAs PHEMTs exhibit better noise characteristics due to a better carrier confinement at the back channel.  Our study also demonstrated an unprecedented low-frequency noise performance of PHEMT with an InGaP Schottky barrier.

 

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