Contactless Electrical Characterization of HEMP Epitaxial Stgructures and Devices

S. Solodky1, T. Baksht1, A. Kramtsov2, I. Ortenberg1, M. Vazokha1, M. Leibovitch3, A. Hava2 and Yorman Shapira1

1 Department of Electrical Engineering Physical Electronics, Tel-Aviv University, Ramat-Aviv 69978, Israel

Phone: 972-3-6408015, E-mail: sana@eng.tau.ac.il

2 Dept. Of Electrical and Computer Engineering, Ben-Gurion University, Beer-Sheva

3 Gal-El (MMIC), P.O. Box 330, Ashdod 77102, Israel

 

Keywords: GaN HEMT, PHEMT, MHEMT, contactless characterization

 

Abstract

AlGaN/GaN HEMT, AlGaAs/InGAs/GaAs PHEMT and InAlAs/InGaAs MHEMT epitaxial structures have been characterized using surface photovoltage spectroscopy. The efforts of the transistor top and bottom delta-doping levels ?top, ?bot and surface charge Qsur on the spectrum features have been studied using numerical simulations. Universal empirical model has been developed, which allows extraction and comparison of ? top ? bot and Qsur and is applicable for both double-sided and single sided delta-doped structures. Effect of GaN HEMT surface passivation has been studied. Prediction of the final device performance by the model is shown for two MHEMT structures. Correlation between extracted Qsur and device pinch-off voltage Vp is shown.

 

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