Gate Electrode Formation Process Optimization in a GaAs FET Device
Craig Carpenter, Chris Shepard, and Matt Stevenson
Tel: 781-376-3039 Email: firstname.lastname@example.org
Keywords : Gate, CD, Resist, Liftoff, Solvent, Evaporator
This paper will describe how a gate electrode formation process in a GaAs FET device was analyzed and optimized for increased CD control and product throughput. Optimizations included a new resist in the photolithography process, a new solvent and equipment type in the metal liftoff process, and a new dome structure in the metal deposition process. These process optimizations resulted in a gate electrode formation process with improved CD control, a liftoff process with increased throughput, and the elimination of liftoff reworks.