Wide Bandgap Semiconductor Devices and MMICís for microwave and Millimeter-Wave Applications: A DARPA Perspective

Mark Rosker
Defense Advanced Research Projects Agency (DARPA)
3701 North Fairfax Drive, Arlington, VA2203-1714
Phone: (571)218-4507

This paper reports on the recent successful completion of Phase I of DARPAís Wide Bandgap Semiconductor Technology Initiative (WBGSTI). Phase I results are given for semi-insulating substrates and epitaxial growth, and a description and expectations for the upcoming Phases II and III are also provided.††

Keywords: SiC, GaN, A1N, substrate, MMIC

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