InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers

Terence C.L. Wee, T.C. Tsai, J.H. Huang, W.C. Lee, Y.S. Chou, Y.C. Wang, W.J. Ho,
Win Semiconductors Corp. N. 60 Technology 7th Rd., Hway Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333) 
Phone: +886-3-3975999 ext. 1539  Email: terencew@winfoundry.com

This paper reports on our new HBT technology developed for GSM, CDMA and WLAN PA application.  The improvements are achieved by epitaxial, process and layout optimization.  The device performance of the new technologies are presented and compared with our current available technology.  The new device is able to survive VSWR 12:1 under 5V VCE bias, and by turning the power cell for maximum efficiency, we are able to achieve up to 67% PAE. 

Keywords:  InGaP, HBT, power amplifiers

                                    11.2 pdf                             Return to TOC