All i-Line Lift-Off T-Gate Process and Materials
A. Toukhy and Ping-Hung Lu
AZ Electronic Materials USA Corp., 70 Meister Avenue, Somerville, NJ 08876
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An all i-line 0.22 um T-gate process is demonstrated. A resist structure suitable for metal deposition and lift-off is constructed sequentially with two different resist materials. The lithographic process is described in details in this paper.
Keywords: i-line, resist, T-gate, lift-off, GaAs