Transfer from MHEMT to GaN HEMT Technology: Devices and Integration

R. Vandersmissen, J. Das, W. Ruythooren, J. Derluyn, M. Germain, D. Xiao, D. Schreurs* and G. Borghs 

IMec - MCP/ART, Kapeldreef 75, B-3001 Leuven, Belgium 
*ESAT-TELEMIC, Kasteelpark Arenberg 1, B-3001 Leuven, Belgium
Email: raf.vandersmissen@imec.be  Phone: +32-16-288-056  Fax: +32-16-281-501

AlGaN/GaN HEMTs are very promising devices for microwave power applications.  Using a mask set originally developed for MHEMTs on GaAs and Ge, we have realized GaN-on-sapphire devices exhibiting bery good DC and RF performance.  Integration and packaging of these high power density devices necessitate specific attention to thermal management, especially for HEMTs grown on sapphire substrates.  The low thermal conductivity of sapphire limits the power performance of these devices.  Analogously to earlier work on MHEMTs on germanium substrates, we propose a substrate removal method and MCM-D integration technique for GaN-on-sapphire HEMTs. 

Keywords:  GaN HEMT, sapphire, device integration, MCM-D, laser lift-off

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