Issues in Scaling Production Nitride MBE Systems
O'Steen, M. Sheldon, R. Bresnahan, T. Bird, and D.W. Gotthold*
Process Integration Center,
Veeco Instruments Inc.
Email: firstname.lastname@example.org (651) 482-0800
In recent years, gallium nitride-based (GaN) electronics have shown great promise for high-power RF devices in university and industrial research laboratories. Single-wafer molecular beam epitaxy (MBE) systems have been the preferred epitaxial tools for growing these electronic materials. However, moving these GaN-based devices into high-volume production requires uniform, repeatable growth on large (100mm) substrates. This presentation will address the issues involved in scaling MBE growth of nitrides from single-wafer R&D demonstrations up to production on multiple 100mm wafers.
Keywords: MBE, GaN, HEMT