Characterization of Electrostatic Carrier Substrates to be used as a Support for Thin Semiconductor Wafers

K. Bock, C. Landesberger, M. Bleier, D. Bollmann, D. Hennetzberger

Fraunhofer Institute for Reliability and Microintegration IZM-M, Munich branch of the institute, Hansastrasse 27 d, 80686 Munich, Germany 
Email: christof.landesberger@izm-m.fraunhofer.de, Phone: +49-0-89-54759-295

Mobile electrostatic carriers enable secure and reversible attachment of very thin semiconductor wafers by electrostatic forces which are induced by a permanent polarization state of a dielectric layer.  The paper reports on the electrical and thermal characterization of electrostatic carriers, also called “Smart Carriers”, prepared by thick film technology on alumina substrates and by thin film technology on silicon substrates.  Development work revealed the strong impact of leakage currents when durable attractive forces at temperatures above 250oC have to be attained.  When using silicon as substrate material the electrostatic attraction was active for more than 1 hour at temperatures of 400oC.  The carrier system will be demonstrated at the poster stand. 

Keywords:  Electrostatic carrier substrates, reversible bonding, thin wafer processing, “Smart Carrier”

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