Study of 1/f and 1/f2 for InP SHBT and DHBT
Kurt Cimino, Yue-ming Hsin*, S.C. Shen**, and Milton Feng
Department of Electrical and Computer Engineering, University of Illinois, 1406 W. Green Street, Urbana, IL 61801
*Department of Electrical Engineering, National Central University, Chung-li Taiwan **School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA Phone: (217) 333-4048 Email: email@example.com
This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs. Double heterojunction device structures are examined with and without surface passivation ledges.
Keywords: HBT, Noise, 1/f, 1/f2