Reduction of Edge Particles on pHEMT Wafers grown by Production Molecular Beam Epitaxy

C.E. Lee*, P.S. Lyman, and W.E. Hoke l Ratheon
RF Components, 362 Lowell St., Andover, MA  01810 
*Phone: 1-978-684-5437   Email: Chae-Deok_Lee@ratheon.com

Particles near the wafer edge on pseudomorphic high electron mobility transistor (pHEMT) wafers grown by production molecular beam epitaxy (MBE) were investigated.  It was found that the formation of edge particles is associated with decomposition of the GaAs substrate under As-deficient condition.  Therefore, the MBE platen was modified to allow As beam exposure during the growth process, resulting in significant decrease of edge particles. 

Keywords:  Edge Particle, Oval Defects, Platen, Production Molecular Beam Epitaxy, pHEMT

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