Stepper Based Sub-0.25m Process for mm-Wave Applications

Matthew F. O'Keefe, James G.E. Mayock, D. Mike Brookbanks, Jason McMonagle and John S. Atherton,
Filtonic ICS, Newton Aycliffe, County Durham, DL5 6JW. UK
Phone: +44 1325 301111, Fax +44 1325 306600, email: matthew.okeefe@filtronic.com

The stepper based volume sub-0.25m GaAs pHEMT process utilized 5 inter-level metallizations and three dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6) diameter substrates. The process has recently been used to fabricate X-band and K-band MMICs, showing excellent performance and yield. The approach taken here with DUV stepper and 150mm wafer diameter will lead to a significant cost reduction for MMICs up to 30 GHZ.

Keywords: Stepper, volume, sub-0.25m, manufacturing, pHEMT, MMIC

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