Stepper Based Sub-0.25µm Process for mm-Wave Applications
J. Roesch TriQuint Semiconductor, Inc.,
The stepper based volume sub-0.25µm GaAs pHEMT process utilized 5 inter-level metallizations and three dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6”) diameter substrates. The process has recently been used to fabricate X-band and K-band MMICs, showing excellent performance and yield. The approach taken here with DUV stepper and 150mm wafer diameter will lead to a significant cost reduction for MMICs up to 30 GHZ.
Keywords: Stepper, volume, sub-0.25µm, manufacturing, pHEMT, MMIC