Reliability Evaluation of InGaAsN for PA Handset Applications
Rushing, Pete Zampardi and Mike Sun,
Skyworks Solutions, Inc.
2427 Hillcrest Drive, Newbury Park, CA 91320
An initial assessment of the reliability of InGaP/InGaAsN transistors was investigated in order to evaluate this new material system for cell phone applications. The investigation consisted of single temperature HTOL with a modest case temperature of 200oC, Vcc of 5.0V, and a current density of 25kA/cm2. InGaP/InGaAsN variants and InGaP/GaAs controls were stressed at the same time. The failure mode for both the InGaP/InGaAsN and InGaP/GaAs transistors was identified through IV characterization as Beta degradation due to an increase in Ib. All other device parameters are stable. The Beta degradation data was used to construct a probability plot. The InGap/InGaAsN transistors had greater or comparable reliability to the control population, thus indicating that this material has sufficient reliability for cell phone applications.
Keywords: InGaAsN, GAIN, HBT, Reliability