Nam, R. Tsai, M. Lange, W. Deal, J. Lee, C. Namba, P. Liu, R. Grundbacher, J.
Wang, M. Barsky, A Gutierrez-Aitken and S. Olson
Northrop Grumman Space Technology,
A mesa isolation process of AlSb/InAs HEMT has been developed by using inductively coupled plasma etching. The etch rate is well controlled and the resulting mesa floor demonstrates a significant improvement in smoothness as compared to a wet-etch floor. Devices fabricated by this technique show a revolutionary RF performance of fT=220 GHz and fmax=275 GHz at 170 mW/mm for a 0.1-µm gate.
Keywords: AlSb/InAs HEMT, AlGaSb buffer, mesa isolation, ICP etching