A Highly Uniform and Reliable AlGaN/GaN HEMT

Junichiro Nikaido1), Toshihide Kikkawa2, Shigeru Yokokawa1), and Tashunori Tateno1)

1)Eudyna Devices Inc. 1000 Kamisukiahara, Showa-cho, Nakakoma-gun, Yamanashi, 409-3883, Japan

2)Fujitsu Laboratories Ltd. 10-1 Morinosata-Wakamiya, Atsugi, 243-0197, Japan 
Email: j.nikaido@eudyna.com,  Phone: +81-55-275-4411

We describe a highly uniform and reliable AlGaN/GaN-based high electron mobility transistor (HEMT) with the surface-charge-controlled structure on a SiC substrate for microwave applications.  To obtain a highly uniform device, we adopted the n-GaN-cap structure, and optimized the stress and thickness of the SiN on the n-GaN-surface.  The averaged threshold voltage (Vth) of -1.69 V and the associated standard deviation of 21 mV were obtained.  Preliminary reliability was characterized using a RF power stress test.  A CW P3dB RF-power measurement at Vds of 60 V exhibited good reliability over 1000 h.

 Keywords:  GaN, HEMT, current-collapse-free, base station

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