25 Watt X-band GaN on Si MMIC

D.M. Fanning, L.C. Wiotkowski, C. Lee, D.C. Dumka, H.Q. Tserng, P. Saunier, W. Gaiewski, ElL. Piner*, K.J. Linthicum* and J.W. Johnson* 
TriQuint Semiconductor Texas, 500 Renner road, Richardson, TX  75080 USA

*Nitronix Corporation, 628 Hutton Street, Suite 106, Raleigh, NC  27606 USA 
Phone: 972-994-3994  Email: dfanning@tqtx.com

The first GaN on Si monolithic microwave integrated circuit (MMIC) has been demonstrated.  The 2-stage X-band high power amplifier has a 2.5 mm input stage and an 11.4 mm output stage and its die size is 3 mm x 4.5 mm.  At 10 GHz and 30 V drain bias, this MMIC achieved a pulsed output power of 25 W with 15 dB gain and 21% power-added efficiency.  It produced 20 W of output power over the 8 to 10.5 GHz band when biased at 24 V.  The GaN on Si MMIC was fabricated on TriQuint’s 4 inch GaAs manufacturing line and used an existing GaAs design. 

Keywords:  AlGaN/GaN HFET, GaN-on-Si, MMIC, X-band, High Power Amplifier

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