Recent Progress of Highly Reliable GaN-HEMT for Mass Production

 

Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, and Kazukiyo Joshin

 

Fujitsu Laboratories Ltd.

10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197, Japan

kikkawa.toshi@jp.fujitsu.com

Phone: +81-46-250-8243

 


Abstract

     In this paper, we describe the recent progress of highly reliable GaN high electron mobility transistors (HEMTs) for mass production. We introduce reliability data of recent GaN-HEMT. There are three phases to understand the reliability. Yield issues are discussed considering surface hexagonal pits. Cost is most important issues after reliability is confirmed. Highly uniform low cost GaN-HEMT using a conductive 3-inch SiC substrate will be reported. In addition, future base station requires extremely high efficiency, requiring GaN-HEMT to be used at saturation region. An over 100 W GaN-HEMT using metal-insulator-semiconductor (MIS) gate is demonstrated to suppress the forward gate leakage current at saturation region.

 

 

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