Combined Infrared and Raman temperature measurements on device structures

 

A. Sarua1, Hangfeng Ji1, M. Kuball1, M. J. Uren2, T. Martin2, K. P. Hilton2, and R. S. Balmer2

 

1) H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom

phone: +44 117 3317739 e-mail: a.sarua@bristol.ac.uk

2) QinetiQ Ltd., St. Andrew’s Road, Malvern, Worcs, WR14 3PS, United Kingdom

 

 

Keywords: HFET, GaN, Raman, Infrared, thermography, temperature

 


Abstract

     Combined Infrared and micro-Raman techniques were applied to measure temperature rise in semiconductor device structures based on AlGaN/GaN HFETs. Results from both techiques were compared and temperature and spatial resolution issues were discussed. Finite-difference 3D modeling of temperature distributions was performed to aid the interpretation of the experimental data. In addition the versatility of the Raman method was demonstrated for a GaAs pHEMT device. 


 

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