Combined Infrared and Raman temperature measurements on device structures
Wills Physics Laboratory,
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Combined Infrared and micro-Raman techniques were applied to measure temperature rise in semiconductor device structures based on AlGaN/GaN HFETs. Results from both techiques were compared and temperature and spatial resolution issues were discussed. Finite-difference 3D modeling of temperature distributions was performed to aid the interpretation of the experimental data. In addition the versatility of the Raman method was demonstrated for a GaAs pHEMT device.